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PDF HAF2002 Data sheet ( Hoja de datos )
| Número de pieza | HAF2002 | |
| Descripción | Silicon N Channel MOS FET Series Power Switching | |
| Fabricantes | Hitachi Semiconductor | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de HAF2002 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
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HAF2002
Silicon N Channel MOS FET Series
Power Switching
ADE-208-503 A (Z)
2nd. Edition
October 1997
Features
This FET has the over temperature shut–down capability sensing to the junction temperature.
This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit
operation to shut–down the gate voltage in case of high junction temperature like applying over power
consumption, over current etc.
• Logic level operation (4 to 6 V Gate drive)
• High endurance capability against to the short circuit
• Built–in the over temperature shut–down circuit
• Latch type shut–down operation (Need 0 voltage recovery)
Outline
TO–220FM
D
G Gate resistor
Tempe–
rature
Sencing
Circuit
Latch
Circuit
Gate
Shut–
down
Circuit
S
123
1. Gate
2. Drain
3. Source
1 page  
HAF2002
Normalized Transient Thermal Impedance vs. Pulse Width
10
1 D=1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
1shot
pulse
0.001
10 µ
100 µ
Tc = 25°C
q ch – c(t) = g s (t) • q ch – c
q ch – c = 4.17 °C/W, Tc = 25 °C
PDM
PW
T
D=
PW
T
1m
10 m
100 m
Pulse Width PW (S)
1
10
Switching Time Test Circuit
VGS Monitor
D.U.T.
Vout
Monitor
RL
VGS
5V
50W
VDD
= 30 V
Waveform
VGS 10%
Vout 10%
90%
td(on)
tr
90%
10%
90%
td(off)
tf
5
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HAF2002.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HAF2001 | Silicon N Channel MOS FET Series Power Switching | Hitachi Semiconductor |
| HAF2002 | Silicon N Channel MOS FET Series Power Switching | Hitachi Semiconductor |
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