(PDF) HAF2005 Datasheet - Silicon N Channel MOS FET Series Power Switching

Número de pieza	HAF2005
Descripción	Silicon N Channel MOS FET Series Power Switching
Fabricantes	Hitachi Semiconductor
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No Preview Available ! HAF2005 Silicon N Channel MOS FET Series Power Switching ADE-208-688 (Z) Target specification 1st. Edition Nov. 1998 This FET has the over temperature shut–down capability sensing to the junction temperature. This FET has the built–in over temperature shut–down circuit in the gate area. And this circuit operation to shut–down the gate voltage in case of high junction temperature like applying over power consumption, over current etc. Features • Logic level operation (4 to 6 V Gate drive) • High endurance capability against to the short circuit • Built–in the over temperature shut–down circuit • Latch type shut–down operation (Need 0 voltage recovery) Outline TO–220FM D G Gate resistor Tempe– rature Sencing Circuit Latch Circuit Gate Shut– down Circuit S 123 1. Gate 2. Drain 3. Source 1 page Package Dimensions 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 HAF2005 Unit: mm 1.2 ± 0.2 1.4 ± 0.2 0.7 ± 0.1 2.54 ± 0.5 4.45 ± 0.3 2.7 2.54 ± 0.5 0.5 ± 0.1 Hitachi Code TO–220FM EIAJ Code SC–72 JEDEC Code — 5 5 Page

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