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NB3N3001 PDF даташит

Спецификация NB3N3001 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «PureEdge Clock Generator».

Детали детали

Номер произв NB3N3001
Описание PureEdge Clock Generator
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NB3N3001 Даташит, Описание, Даташиты
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NB3N3001
3.3 V 106.25 MHz/ 212.5 MHz
PureEdge Clock Generator with
LVPECL Differential Output
Description
The NB3N3001 is a low−jitter, dual−rate PLL−synthesized clock
generator. It accepts a standard 26.5625 MHz fundamental mode AT cut
parallel resonant crystal as the reference source for its integrated crystal
oscillator and low noise phase−locked loop (PLL) and produces user
selectable clock frequencies of either 106.25 MHz or 212.5 MHz.
In addition, the PLL circuitry will generate a 50% duty cycle
square−wave through a pair of differential LVPECL clock outputs.
Typical phase jitter at 106.25 MHz is 0.3 ps RMS from 637 kHz to
10 MHz.
The LVPECL output drivers can be disabled to high impedance with
the OE pin set LOW. The NB3N3001 operates from a single +3.3 V
supply, and is available in both plastic package and die form. The
operating temperature range is from −40°C to +85°C.
The NB3N3001 device provides the optimum combination of low
cost, flexibility, and high performance which makes it ideal for
Fibre−Channel applications.
Features
PureEdge Clock Family Provides Accuracy and Precision
Selectable Output Frequency of 106.25 MHz or 212.5 MHz
Crystal Oscillator Interface Designed for a 26.5625 MHz Crystal
Fully Integrated Phase−Lock−Loop with Internal Loop Filter
Differential 3.3 V LVPECL Outputs
Exceeds Bellcore and ITU Jitter Generation Specification
RMS Phase Jitter @ 106.25 MHz, using a 26.5625 MHz Crystal
(637 kHz − 10 MHz): 0.3 ps (Typical)
RMS Phase Noise at 106.25 MHz
Phase Noise:
Offset Noise Power
100 Hz −108 dBc/Hz
1 kHz −122 dBc/Hz
10 kHz −135 dBc/Hz
100 kHz −135 dBc/Hz
Operating Range: VCC = 3.135 V to 3.465 V
−40°C to +85°C Ambient Operating Temperature
Small Footprint 8−pin TSSOP Package
This is a Pb−Free Device
http://onsemi.com
TSSOP−8
DT SUFFIX
CASE 948S
MARKING
DIAGRAM
301
YWW
AG
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
FSEL
XIN
26.5625 MHz
XOUT
Crystal
Oscillator
Phase
Detector
Charge
Pump
VCO
850 MHz
M = B32
Figure 1. Logic Diagram
N =B8
orB4
LVPECL
Output
Q 212.5 MHz
or
Q 106.25 MHz
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. 1
1
Publication Order Number:
NB3N3001/D









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NB3N3001 Даташит, Описание, Даташиты
NB3N3001
VCCA 1
VEE 2
XOUT 3
XIN 4
NB3N3001
8 VCC
7Q
6Q
5 FSEL
Table 1. Output Frequency Select
FSEL
Output Frequency (MHz)
0 106.25
1 212.5
NOTE: Input crystal = 26.5625 MHz
Figure 2. Pinout (Top View)
Table 2. PIN DESCRIPTION
Pin Symbol
Type
1 VCCA
2 VEE
3 XOUT
4 XIN
5 FSEL
Power
Power
Input
Input
LVTTL/LVCMOS
Input
6Q
Output
7Q
Output
8 VCC
Power
Description
Positive analog power supply pin. Connected to VCC with filter components (See Figure 8).
Negative supply pin.
Crystal input (OUT).
Crystal input (IN).
Frequency select pin. Defaults LOW when left open. Internal pull down resistor to VEE.
Inverted differential output. Typically terminated with 50 W to VCC−2.0 V.
Noninverted differential output. Typically terminated with 50 W to VCC−2.0 V.
Positive digital core power supply pin. Connected to 3.3 V.
Table 3. ATTRIBUTES
Characteristic
ESD Protection
Human Body Model
Machine Model
Moisture Sensitivity (Note 1)
Pb−Free Pkg, TSSOP−8
Flammability Rating Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 6 kV
> 200 V
Level 3
UL 94 V−0 @ 0.125 in
4150
Table 4. MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
VCC Supply Voltage
VI Inputs
IO Output Current
Continuous
Surge
4.6
−0.5 to VCC + 0.5
50
100
V
V
mA
qJA Thermal Resistance (Junction−to−Ambient)
0 Lfpm
500 Lfpm
142
103
°C/W
TSTG
Storage Temperature
−65 to 150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
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NB3N3001 Даташит, Описание, Даташиты
NB3N3001
Table 5. POWER SUPPLY DC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C)
Symbol
Parameter
Conditions
Min
Typ
Max Unit
VCC Core Supply Voltage
3.135
3.3
3.465
V
VCCA Analog Supply Voltage
3.135
3.3
3.465
V
ICCA
Analog Supply Current
Included in IEE
19 23 mA
IEE Power Supply Current
27 31 mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
Table 6. LVPECL DC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C)
Symbol
Parameter
Conditions
Min Typ Max Unit
VOH Output High Voltage (Note 2)
VCC − 1.4
VCC − 0.9
V
VOL Output Low Voltage (Note 2)
VCC − 2.0
VCC − 1.7
V
VSWING Peak−to−Peak Output Voltage Swing
0.6 0.75 1.0 V
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Outputs terminated with 50 W to VCC − 2.0 V. See Figures 4 and 12.
Table 7. LVTTL/LVCMOS DC CHARACTERISTICS, (VCC = 3.3 V ±5%, TA = −40°C to 85°C)
Symbol
Parameter
Conditions
Min
VIH Input High Voltage
VIL Input Low Voltage
IIH Input High Current
IIL Input Low Current
FSEL
FSEL
VCC = VIN = 3.465 V
VCC = 3.465 V, VIN = 0 V
2.0
−0.3
−5.0
Typ
Max
VCC + 0.3
0.8
150
Unit
V
V
mA
mA
Table 8. PIN CHARACTERISTICS
Symbol
Parameter
CIN Input Capacitance
RPD Input Pull Down Resistor
Conditions
Min Typ Max Unit
4 pF
100 kW
Table 9. CRYSTAL CHARACTERISTICS (Fundamental Mode 18 pF Parallel Resonant Crystal)
Parameter
Conditions
Min Typ Max Unit
Frequency
26.5625
MHz
Equivalent Series Resistance (ESR)
50 W
Shunt Capacitance
7.0 pF
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