DataSheet26.com

NTJS3151P PDF даташит

Спецификация NTJS3151P изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Trench Power MOSFET».

Детали детали

Номер произв NTJS3151P
Описание Trench Power MOSFET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

6 Pages
scroll

No Preview Available !

NTJS3151P Даташит, Описание, Даташиты
www.DataSheet4U.com
NTJS3151P
Trench Power MOSFET
12 V, 3.3 A, Single P−Channel,
ESD Protected SC−88
Features
Leading Trench Technology for Low RDS(ON) Extending Battery Life
SC−88 Small Outline (2x2 mm, SC70−6 Equivalent)
Gate Diodes for ESD Protection
Pb−Free Package is Available
Applications
High Side Load Switch
Cell Phones, Computing, Digital Cameras, MP3s and PDAs
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Units
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Steady
State
t5 s
Steady
State
TA = 25 °C
TA = 85 °C
TA = 25 °C
TA = 25 °C
VDSS
VGS
ID
PD
−12
±12
−2.7
−2.0
−3.3
0.625
V
V
A
W
Pulsed Drain Current
tp = 10 µs
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IDM
TJ,
TSTG
IS
TL
−8.0
−55 to
150
−0.8
260
A
°C
A
°C
THERMAL RESISTANCE RATINGS (Note 1)
Parameter
Symbol Max Units
Junction−to−Ambient – Steady State
RθJA
Junction−to−Ambient − t 5 s
RθJA
Junction−to−Lead – Steady State
RθJL
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
200 °C/W
141
102
http://onsemi.com
V(BR)DSS
−12 V
RDS(on) TYP
45 mW @ −4.5 V
67 mW @ −2.5 V
133 mW @ −1.8 V
ID Max
−3.3 A
MARKING DIAGRAM
6
1
SC−88
(SOT 363)
CASE 419B
STYLE 28
TJ
TJ = Device Code
D = Date Code
SC−88 (SOT−363)
D1
6D
D2
5D
G3
4S
Top View
D
3 kW
G
S
ORDERING INFORMATION
Device
Package
Shipping
NTJS3151PT1
SC−88 3000 Units/Reel
NTJS3151PT1G SC−88
3000 Units/Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
March, 2004 − Rev. 0
1
Publication Order Number:
NTJS3151/D









No Preview Available !

NTJS3151P Даташит, Описание, Даташиты
www.DataSheet4U.com
NTJS3151P
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = −250 µA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 2)
IDSS
IGSS
VGS = −9.6 V,
VDS = 0 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = ±4.5 V
VDS = 0 V, VGS = ±12 V
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)
VGS(TH)/TJ
VGS = VDS, ID = 100 µA
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
RDS(on)
gFS
VGS = −4.5 V, ID = −3.3 A
VGS = −2.5 V, ID = −2.9 A
VGS = −1.8 V, ID = −1.0 A
VGS = −10 V, ID = −3.3 A
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
Total Gate Charge
QG(TOT)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Resistance
RG
SWITCHING CHARACTERISTICS (Note 3)
VGS = 0 V, f = 1.0 MHz,
VDS = −12 V
VGS = −4.5 V, VDS = −5.0 V,
ID = −3.3 A
Turn−On Delay Time
Rise Time
td(ON)
tr
VGS = −4.5 V, VDD = −6.0 V,
ID = −1.0 A, RG = 6.0
Turn−Off Delay Time
td(OFF)
Fall Time
tf
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 2)
Forward Diode Voltage
VSD
VGS = 0 V,
TJ = 25°C
IS = −3.3 A
TJ = 125°C
2. Pulse Test: pulse width 300µs, duty cycle 2%.
3. Switching characteristics are independent of operating junction temperatures.
Min
−12
−0.40
Typ
10
−2.5
3.4
45
67
133
15
850
170
110
8.6
1.3
2.2
3000
0.86
1.5
3.5
3.9
−0.85
−0.7
Max Unit
V
mV/°C
−1.0 µA
±1.5 µA
±10 mA
V
mV/°C
60 m
90
160
S
pF
nC
µs
−1.2 V
http://onsemi.com
2









No Preview Available !

NTJS3151P Даташит, Описание, Даташиты
www.DataSheet4U.com
NTJS3151P
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
8
VGS = −4.5 V
VGS = −3.4 V
6
−2.4 V
TJ = 25°C
−2 V
8
VDS −12 V
6
44
2 −1.6 V
−1.4 V
0 −1.2 V
01234 5
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
125°C
2
25°C
0
0 0.5
1
TJ = −55°C
1.5 2 2.5 3 3.5
4 4.5
−VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
0.1
VGS = −4.5 V
0.075
0.05
0.025
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
−ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Drain Current and
Temperature
0.5
VGS = −1.8 V
TJ = 25°C
0.4
0.3
0.2
0.1 VGS = −2.5 V
0 VGS = −4.5 V
0.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5
−ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
1.8
ID = −3.3 A
VGS = −4.5 V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
−50 −25
0
25 50 75 100 125
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
100000
VGS = 0 V
10000
TJ = 150°C
1000
TJ = 125°C
100
150 0 2 4 6 8 10 12
−VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
3










Скачать PDF:

[ NTJS3151P.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NTJS3151PTrench Power MOSFETON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск