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NCS2501 PDF даташит

Спецификация NCS2501 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Feedback Op Amp».

Детали детали

Номер произв NCS2501
Описание Feedback Op Amp
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NCS2501 Даташит, Описание, Даташиты
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NCS2501
1.1 mA 200 MHz Current
Feedback Op Amp with
Enable Feature
NCS2501 is a 1.1 mA 200 MHz current feedback monolithic
operational amplifier featuring high slew rate and low differential gain
and phase error. The current feedback architecture allows for a
superior bandwidth and low power consumption. This device features
an enable pin.
Features
−3.0 dB Small Signal BW (AV = +2.0, VO = 0.5 Vp−p) 200 MHz Typ
Slew Rate 450 V/ms
Supply Current 1.1 mA
Input Referred Voltage Noise 4.0 nV/ǸHz
THD −55 dB (f = 5.0 MHz, VO = 2.0 Vp−p)
Output Current 100 mA
Enable Pin Available
Pin Compatible with EL5160, MAX4180, OPA683
Pb−Free Packages are Available
Applications
Portable Video
Line Drivers
Radar/Communication Receivers
Set Top Box
NTSC/PAL/HDTV
3
Gain = +2
2 RF = 1.2kW
1 RL = 100W
VS = ±5V
VOUT = 0.5V
VS = ±5V
VOUT = 0.7V
0
−1
−2
−3
−4
−5
−6
0.01
VS = ±2.5V
VOUT = 2.0V
VS = ±5V
VOUT = 2.0V
VS = ±2.5V
VOUT = 0.7V
VS = ±2.5V
VOUT = 0.5V
0.1 1
10
FREQUENCY (MHz)
100
1000
Figure 1. Frequency Response:
Gain (dB) vs. Frequency Av = +2.0, RL = 100 W
http://onsemi.com
8
1
SO−8
D SUFFIX
CASE 751
MARKING
DIAGRAMS
8
N2501
ALYW
G
1
54
6
3
12
SC−70−6
(SC−88)
SQ SUFFIX
CASE 419B
6
YA1M
G
1
6
1
SOT23−6
(TSOP−6)
SN SUFFIX
CASE 318G
6
YA1YW
G
1
YA1, N2501 = NCS2501
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
M = Date Code
G = Pb−Free Package
SO−8 PINOUT
NC 1
−IN 2
+IN 3
VEE 4
+
8 EN
7 VCC
6 OUT
5 NC
(Top View)
SOT23−6/SC70−6 PINOUT
OUT 1
VEE 2
+IN 3
6 VCC
5 EN
4 −IN
(Top View)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 13 of this data sheet.
© Semiconductor Components Industries, LLC, 2005
May, 2005 − Rev. 1
1
Publication Order Number:
NCS2501/D









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NCS2501 Даташит, Описание, Даташиты
PIN FUNCTION DESCRIPTION
Pin
(SO−8)
Pin
(SOT23/SC70)
Symbol
61
OUT
NCS2501
Function
Output
Equivalent Circuit
VCC
ESD
OUT
42
33
VEE Negative Power Supply
+IN Non−inverted Input
VEE
VCC
ESD
+IN
ESD
−IN
24
76
85
−IN Inverted Input
VCC Positive Power Supply
EN Enable
1, 8 N/A
NC
No Connect
ENABLE PIN TRUTH TABLE
Enable
*Default open state
High*
Enabled
VCC
VEE
See Above
VCC
ESD
EN
VEE
Low
Disabled
+IN
−IN
CC
VEE
Figure 2. Simplified Device Schematic
OUT
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NCS2501 Даташит, Описание, Даташиты
NCS2501
ATTRIBUTES
Characteristics
Value
ESD
Human Body Model
Machine Model
Charged Device Model
2.0 kV (Note 1)
200 V
1.0 kV
Moisture Sensitivity (Note 2)
Level 1
Flammability Rating Oxygen Index: 28 to 34
UL 94 V−0 @ 0.125 in
1. 0.8 kV between the input pairs +IN and −IN pins only. All other pins are 2.0 kV.
2. For additional information, see Application Note AND8003/D.
MAXIMUM RATINGS
Parameter
Symbol
Rating
Unit
Power Supply Voltage
Input Voltage Range
Input Differential Voltage Range
Output Current
Maximum Junction Temperature (Note 3)
Operating Ambient Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance, Junction−to−Air
SO−8
SC70−6
SOT23−6
VS
VI
VID
IO
TJ
TA
Tstg
PD
RqJA
11
vVS
vVS
100
150
−40 to +85
−60 to +150
(See Graph)
172
215
154
VDC
VDC
VDC
mA
°C
°C
°C
mW
°C/W
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
3. Power dissipation must be considered to ensure maximum junction temperature (TJ) is not exceeded.
MAXIMUM POWER DISSIPATION
The maximum power that can be safely dissipated is limited
by the associated rise in junction temperature. For the plastic
packages, the maximum safe junction temperature is 150°C.
If the maximum is exceeded momentarily, proper circuit
operation will be restored as soon as the die temperature is
reduced. Leaving the device in the “overheated’’ condition for
an extended period can result in device damage.
1400
1200
1000
800
600
400
SO−8 Pkg
SOT23 Pkg
SC70 Pkg
200
0
−50 −25
0 25 50 75 100 125 150
Ambient Temperature (°C)
Figure 3. Power Dissipation vs. Temperature
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