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H11A4X PDF даташит

Спецификация H11A4X изготовлена ​​​​«ISOCOM COMPONENTS» и имеет функцию, называемую «(H11Axx) OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT».

Детали детали

Номер произв H11A4X
Описание (H11Axx) OPTICALLY COUPLED ISOLATOR PHOTOTRANSISTOR OUTPUT
Производители ISOCOM COMPONENTS
логотип ISOCOM COMPONENTS логотип 

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H11A4X Даташит, Описание, Даташиты
www.DataSheet4U.com
H11A1X, H11A2X, H11A3X, H11A4X, H11A5X
H11A1, H11A2, H11A3, H11A4, H11A5
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
APPROVALS
l UL recognised, File No. E91231
'X' SPECIFICATION APPROVALS
l VDE 0884 in 3 available lead forms : -
- STD
- G form
- SMD approved to CECC 00802
l Certified to EN60950 by the following
Test Bodies :-
Nemko - Certificate No. P96101299
Fimko - Registration No. 190469-01..22
Semko - Reference No. 9620076 01
Demko - Reference No. 305567
DESCRIPTION
The H11A series of optically coupled isolators
consist of infrared light emitting diode and
NPN silicon photo transistor in a standard 6 pin
dual in line plastic package.
FEATURES
l Options :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
l High Isolation Voltage (5.3kVRMS ,7.5kVPK )
l All electrical parameters 100% tested
l Custom electrical selections available
APPLICATIONS
l DC motor controllers
l Industrial systems controllers
l Measuring instruments
l Signal transmission between systems of
different potentials and impedances
OPTION SM
SURFACE MOUNT
OPTION G
7.62
0.6
0.1
10.46
9.86
1.25
0.75
0.26
10.16
2.54 Dimensions in mm
1
7.0
6.0 2
3
1.2
7.62
6.62 4.0
3.0
3.0
0.5
0.5
3.35
7.62
0.26
6
5
4
13°
Max
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage Temperature
-55°C to + 150°C
Operating Temperature
-55°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current
Reverse Voltage
Power Dissipation
60mA
6V
105mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BV
CEO
Collector-base Voltage BVCBO
Emitter-collector Voltage BV
ECO
Power Dissipation
30V
70V
6V
160mW
POWER DISSIPATION
Total Power Dissipation
200mW
(derate linearly 2.67mW/°C above 25°C)
ISOCOMCOMPONENTSLTD
Unit 25B, Park View Road West,
Park View Industrial Estate, Brenda Road
Hartlepool, TS25 1YD England Tel: (01429)863609
Fax : (01429) 863581 e-mail [email protected]
http://www.isocom.com
7/12/00
DB91041m-AAS/A1









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H11A4X Даташит, Описание, Даташиты
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
Input
Forward Voltage (VF)
Reverse Voltage (V )
R
Reverse Current (IR)
1.2 1.5 V
6V
10 µA
Output
Collector-emitter Breakdown (BV )
CEO
( note 2 )
Collector-base Breakdown (BVCBO)
Emitter-collector Breakdown (BV )
ECO
Collector-emitter Dark Current (ICEO)
Collector-base Dark Current (ICBO)
30
70
6
V
V
V
50 nA
20 nA
Coupled
Current Transfer Ratio (CTR)
H11A1
H11A2
H11A3
H11A4
H11A5
50
20
20
10
30
%
%
%
%
%
Collector-emitter Saturation VoltageVCE(SAT)
Input to Output Isolation Voltage V 5300
ISO
7500
Input-output Isolation Resistance RISO 5x1010
Output Rise Time tr
Output Fall Time tf
2
2
0.4 V
V
RMS
VPK
µs
µs
TEST CONDITION
IF = 10mA
I
R
=
10µA
VR = 6V
I = 1mA
C
IC = 100µA
I
E
=
100µA
VCE = 10V
VCE = 10V
10mA I , 10V V
F CE
10mA I , 10V V
F CE
10mA IF , 10V VCE
10mA IF , 10V VCE
10mA I , 10V V
F CE
10mA IF , 0.5mA IC
See note 1
See note 1
VIO = 500V (note 1)
V = 10V , I = 2mA
CC C
RL = 100fig 1
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
7/12/00
VCC
RL = 100
Input
ton
Output
tr
Output
10%
90%
FIG 1
toff
tf
10%
90%
DB91041m-AAS/A1









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H11A4X Даташит, Описание, Даташиты
Collector Power Dissipation vs. Ambient Temperature
200
150
100
50
0
-30 0 25 50 75 100 125
Ambient temperature T ( °C )
A
Forward Current vs. Ambient Temperature
80
70
60
50
40
30
20
10
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Forward Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
1
VTACE==205.°5CV
2 5 10 20
Forward current I (mA)
F
50
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1
VT CE==2150°CV
A
2 5 10 20
Forward current IF (mA)
50
Relative Current Transfer Ratio
vs. Ambient Temperature
1.5
I = 10mA
F
V = 10V
CE
1.0
0.5
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
7/12/00
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0.14
0.12
IF = 10mA
0.10
I = 0.5mA
C
0.08
0.06
0.04
0.02
0
-30
0 25 50 75 100
Ambient temperature T ( °C )
A
DB91041m-AAS/A1










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