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PDF NGP8203N Data sheet ( Hoja de datos )
| Número de pieza | NGP8203N | |
| Descripción | Ignition IGBT | |
| Fabricantes | ON Semiconductor | |
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NGP8203N
Ignition IGBT
20 A, 400 V, N−Channel TO−220
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features
monolithic circuitry integrating ESD and Overvoltage clamped
protection for use in inductive coil drivers applications. Primary uses
include Ignition, Direct Fuel Injection, or wherever high voltage and
high current switching is required.
Features
• Ideal for Coil−on−Plug and Driver−on−Coil Applications
• Gate−Emitter ESD Protection
• Temperature Compensated Gate−Collector Voltage Clamp Limits
Stress Applied to Load
• Integrated ESD Diode Protection
• Low Threshold Voltage for Interfacing Power Loads to Logic or
Microprocessor Devices
• Low Saturation Voltage
• High Pulsed Current Capability
• Optional Gate Resistor (RG) and Gate−Emitter Resistor (RGE)
Applications
• Ignition Systems
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Collector−Emitter Voltage
Collector−Gate Voltage
Gate−Emitter Voltage
Collector Current−Continuous
@ TC = 25°C − Pulsed
VCES
VCER
VGE
IC
440
440
"15
20
50
V
V
V
ADC
AAC
Continuous Gate Current
Transient Gate Current (t≤2 ms, f≤100 Hz)
ESD (Charged−Device Model)
IG
IG
ESD
1.0 mA
20 mA
2.0 kV
ESD (Human Body Model)
R = 1500 W, C = 100 pF
ESD
kV
8.0
ESD (Machine Model) R = 0 W, C = 200 pF ESD 500 V
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD 150 Watts
1.0 W/°C
Operating & Storage Temperature Range TJ, Tstg −55 to +175 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
20 AMPS
400 VOLTS
VCE(on) = 1.3 V @
IC = 10 A, VGE . 4.5 V
C
G RG
RGE
E
MARKING
DIAGRAM
NGP
8203N
YWW
1
TO−220
CASE 221A
STYLE 9
G CE
NGP8203N = Device Code
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
NGP8203N
Package
TO−220
Shipping
50 Units / Rail
© Semiconductor Components Industries, LLC, 2006
August, 2006 − Rev. 1
1
Publication Order Number:
NGP8203N/D
1 page  
NGP8203N
TYPICAL ELECTRICAL CHARACTERISTICS
45
40 VCE = 5 V
35
30
25
10000
1000
100
VCE = −24 V
20
15 TJ = 25°C
10
5 TJ = 175°C
0 TJ = −40°C
0 0.5 1 1.5 2 2.5 3 3.5 4
VGE, GATE TO EMITTER VOLTAGE (V)
10
VCE = 200 V
1.0
0.1
−50 −25 0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 7. Transfer Characteristics
Figure 8. Collector−to−Emitter Leakage
Current vs. Temperature
2.50
2.25
2.00
Mean + 4 s
Mean
1.75
1.50 Mean − 4 s
1.25
1.00
0.75
0.50
0.25
−050 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
10000
1000
100
10
1.0
0.1
0
Figure 9. Gate Threshold Voltage vs.
Temperature
Ciss
Coss
Crss
5
10 15
20
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 10. Capacitance vs.
Collector−to−Emitter Voltage
25
12
10
tfall
8
tdelay
6
4
VCC = 300 V
VGE = 5.0 V
RG = 1000 W
2 IC = 9.0 A
RL = 33 W
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 11. Resistive Switching Fall Time vs.
Temperature
12
VCC = 300 V
10 VGE = 5.0 V
RG = 1000 W
8
IC = 9.0 A
L = 300 mH
6
4
tdelay
tfall
2
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Inductive Switching Fall Time vs.
Temperature
http://onsemi.com
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