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NIF5003N PDF даташит

Спецификация NIF5003N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Self-Protected FET».

Детали детали

Номер произв NIF5003N
Описание Self-Protected FET
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NIF5003N Даташит, Описание, Даташиты
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NIF5003N
Preferred Device
Self−Protected FET
with Temperature and
Current Limit
42 V, 14 A, Single N−Channel, SOT−223
HDPlusdevices are an advanced series of power MOSFETs which
utilize ON Semiconductors latest MOSFET technology process to
achieve the lowest possible on−resistance per silicon area while
incorporating smart features. Integrated thermal and current limits
work together to provide short circuit protection. The devices feature
an integrated Drain−to−Gate Clamp that enables them to withstand
high energy in the avalanche mode. The Clamp also provides
additional safety margin against unexpected voltage transients.
Electrostatic Discharge (ESD) protection is provided by an integrated
Gate−to−Source Clamp.
Features
Short Circuit Protection/Current Limit
Thermal Shutdown with Automatic Restart
IDSS Specified at Elevated Temperature
Avalanche Energy Specified
Slew Rate Control for Low Noise Switching
Overvoltage Clamped Protection
Pb−Free Packages are Available
http://onsemi.com
VDSS
(Clamped)
42 V
RDS(on) TYP
53 mW @ 10 V
ID MAX
(Limited)
14 A
Drain
Gate
Input
Overvoltage
Protection
RG
MPWR
ESD Protection
Temperature Current Current
Limit
Limit Sense
Source
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped
Gate−to−Source Voltage
Drain Current
Continuous
Total Power Dissipation
@ TA = 25°C (Note 1)
@ TA = 25°C (Note 2)
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
Junction−to−Ambient (Note 2)
Single Pulse Drain−to−Source Avalanche Energy
(VDD = 25 Vdc, VGS = 5.0 Vdc,
VDS = 40 Vdc, IL = 3.2 Apk, L = 120 mH,
RG = 25 W)
Operating and Storage Temperature Range
(Note 3)
VDSS
VGS
ID
PD
RqJC
RqJA
RqJA
EAS
42 Vdc
"14
Vdc
Internally Limited
W
1.25
1.9
°C/W
12
100
65
400 mJ
TJ, Tstg −55 to 150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings
are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended
Operating Conditions may affect device reliability.
1. Surface mounted onto minimum pad size (0.412square) FR4 PCB, 1 oz cu.
2. Mounted onto 1square pad size (1.127square) FR4 PCB, 1 oz cu.
3. Normal pre−fault operating range. See thermal limit range conditions.
4
1
2
3
SOT−223
CASE 318E
STYLE 3
MARKING DIAGRAM
GATE
DRAIN
SOURCE
1
2
3
4
DRAIN
A = Assembly Location
Y = Year
W = Work Week
5003N = Specific Device Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 2
1
Publication Order Number:
NIF5003N/D









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NIF5003N Даташит, Описание, Даташиты
NIF5003N
MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
(VGS = 0 Vdc, ID = 250 mAdc, TJ = −40°C to 150°C)
Zero Gate Voltage Drain Current
(VDS = 32 Vdc, VGS = 0 Vdc)
(VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate Input Current
(VGS = 5.0 Vdc, VDS = 0 Vdc)
V(BR)DSS
IDSS
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
(VDS = VGS, ID = 1.2 mAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150°C)
Static Drain−to−Source On−Resistance (Note 4)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25°C)
(VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150°C)
Source−Drain Forward On Voltage
(IS = 7.0 A, VGS = 0 V)
RDS(on)
RDS(on)
VSD
SWITCHING CHARACTERISTICS
Turn−on Time
(Vin to 90% ID)
Turn−off Time
(Vin to 10% ID)
Slew Rate On
Slew Rate Off
RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V
T(on)
RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V
T(off)
RL = 4.7 W,
Vin = 0 to 10 V, VDD = 12 V
RL = 4.7 W,
Vin = 10 to 0 V, VDD = 12 V
−dVDS/dton
dVDS/dtoff
SELF PROTECTION CHARACTERISTICS (TJ = 25°C unless otherwise noted) (Note 5)
Current Limit
(VGS = 5.0 Vdc)
VDS = 10 V (VGS = 5.0 Vdc, TJ = 150°C)
ILIM
Current Limit
(VGS = 10 Vdc)
VDS = 10 V (VGS = 10 Vdc, TJ = 150°C)
ILIM
Temperature Limit (Turn−off)
VGS = 5.0 Vdc
TLIM(off)
Thermal Hysteresis
VGS = 5.0 Vdc
DTLIM(on)
Temperature Limit (Turn−off)
VGS = 10 Vdc
TLIM(off)
Thermal Hysteresis
VGS = 10 Vdc
DTLIM(on)
Input Current during Thermal Fault
VDS = 35 V, (VGS = 5.0 V, Tj = 150°C)
Ig(fault)
Input Current during Thermal Fault
VDS = 35 V, (VGS = 10 V, Tj = 150°C)
Ig(fault)
ESD ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM)
ESD
Electro−Static Discharge Capability
Machine Model (MM)
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
ESD
Min
42
40
1.0
12
7.0
18
13
150
150
0.6
2.0
4000
400
Typ
46
45
0.6
2.5
50
1.7
5.0
53
95
63
105
0.95
16
80
1.4
0.5
18
13
22
18
175
15
165
15
Max Unit
51 Vdc
51 mV/°C
mAdc
5.0
125 mAdc
2.2 Vdc
− mV/°C
mW
68
123
mW
76
135
1.1 V
20 ms
100 ms
− V/ms
− V/ms
24 Adc
18
30 Adc
25
200 °C
°C
185 °C
°C
− mA
− mA
−V
−V
http://onsemi.com
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NIF5003N Даташит, Описание, Даташиты
NIF5003N
TYPICAL PERFORMANCE CURVES
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
20
18 VDS 10 V
16
14
12
TJ = −55°C
25°C
10 100°C
8
6
4
2
0
1 1.5 2 2.5 3 3.5 4
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
2
ID = 3 A
TJ = 25°C
3 45 6 78 9
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
0.075
0.07
0.065
TJ = 25°C
VGS = 5 V
0.06
0.055
0.05
VGS = 10 V
0.045
0.04
0.035
0.03
2 3 4 5 6 7 8 9 10
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
ID = 3 A
1.6 VGS = 5 V
1.4
100000
VGS = 0 V
10000
TJ = 150°C
1.2
1000
TJ = 100°C
1.0
100
0.8
0.6
−50 −30 −10 10 30 50 70 90 110 130 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
10
0 5 10 15 20 25 30 35 40 45
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NIF5003NSelf-Protected FETON Semiconductor
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