DataSheet26.com

NSDEMN11XV6T5 PDF даташит

Спецификация NSDEMN11XV6T5 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «(NSDEMN11XV6T1 / NSDEMN11XV6T5) Common Cathode Quad Array Switching Diode».

Детали детали

Номер произв NSDEMN11XV6T5
Описание (NSDEMN11XV6T1 / NSDEMN11XV6T5) Common Cathode Quad Array Switching Diode
Производители ON Semiconductor
логотип ON Semiconductor логотип 

4 Pages
scroll

No Preview Available !

NSDEMN11XV6T5 Даташит, Описание, Даташиты
www.DataSheet4U.com
NSDEMN11XV6T1,
NSDEMN11XV6T5
Common Cathode Quad
Array Switching Diode
This Common Cathode Epitaxial Planar Quad Diode is designed for
use in ultra high speed switching applications. This device is housed in
the SOT−563 package which is designed for low power surface mount
applications, where board space is at a premium.
Features
Fast trr
Low CD
Pb−Free Packages are Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Reverse Voltage
Peak Reverse Voltage
Forward Current
Peak Forward Current
Peak Forward Surge Current
Symbol
VR
VRM
IF
IFM
IFSM
(Note 1)
Value
80
80
100
300
2.0
Unit
Vdc
Vdc
mAdc
mAdc
Adc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD 357 mW
(Note 2)
2.9 mW/°C
(Note 2)
Thermal Resistance, Junction-to-Ambient RqJA
350
(Note 2)
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation @TA = 25°C
Derate above 25°C
PD 500 mW
(Note 2)
4.0 mW/°C
(Note 2)
Thermal Resistance, Junction-to-Ambient RqJA
250
(Note 2)
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. t = 1 mS
2. FR−4 @ Minimum Pad
http://onsemi.com
(3) (2) (1)
(4) (5)
(6)
1
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
N9 M G
G
1
N9 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NSDEMN11XV6T1 SOT−563 4000/Tape & Reel
NSDEMN11XV6T1G SOT−563 4000/Tape & Reel
(Pb−Free)
NSDEMN11XV6T5 SOT−563 8000/Tape & Reel
NSDEMN11XV6T5G SOT−563 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1
Publication Order Number:
NSDEMN11XV6T1/D









No Preview Available !

NSDEMN11XV6T5 Даташит, Описание, Даташиты
NSDEMN11XV6T1, NSDEMN11XV6T5
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Characteristic
Symbol
Condition
Min Max
Unit
Reverse Voltage Leakage Current
Forward Voltage
Reverse Breakdown Voltage
Diode Capacitance
Reverse Recovery Time
IR
VR = 70 V
− 0.1 mAdc
VF
IF = 100 mA
− 1.2 Vdc
VR
IR = 100 mA
80 − Vdc
CD
VR = 6.0 V, f = 1.0 MHz
− 3.5 pF
trr
IF = 5.0 mA, VR = 6.0 V, RL = 100 W, Irr = 0.1 IR
4.0
ns
(Note 3)
3. trr Test Circuit on following page.
100
10
1.0
0.1
0.2
TYPICAL ELECTRICAL CHARACTERISTICS
TA = 85°C
TA = −40°C
TA = 25°C
10
1.0
0.1
0.01
TA = 150°C
TA = 125°C
TA = 85°C
TA = 55°C
0.4 0.6 0.8 1.0
VF, FORWARD VOLTAGE (VOLTS)
Figure 1. Forward Voltage
0.001
1.2 0
TA = 25°C
10 20 30 40
VR, REVERSE VOLTAGE (VOLTS)
Figure 2. Reverse Current
50
1.0
0.9
0.8
0.7
0.6
02
46
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Diode Capacitance
8
http://onsemi.com
2









No Preview Available !

NSDEMN11XV6T5 Даташит, Описание, Даташиты
NSDEMN11XV6T1, NSDEMN11XV6T5
RL
A
RECOVERY TIME EQUIVALENT TEST CIRCUIT
tr tp
10%
90%
VR
tp = 2 ms
tr = 0.35 ns
INPUT PULSE
t
trr
IF t
Irr = 0.1 IR
IF = 5.0 mA
VR = 6 V
RL = 100 W
OUTPUT PULSE
Figure 4. Reverse Recovery Time Test Circuit for the NSDEMN11XV6T1
http://onsemi.com
3










Скачать PDF:

[ NSDEMN11XV6T5.PDF Даташит ]

Номер в каталогеОписаниеПроизводители
NSDEMN11XV6T1(NSDEMN11XV6T1 / NSDEMN11XV6T5) Common Cathode Quad Array Switching DiodeON Semiconductor
ON Semiconductor
NSDEMN11XV6T5(NSDEMN11XV6T1 / NSDEMN11XV6T5) Common Cathode Quad Array Switching DiodeON Semiconductor
ON Semiconductor

Номер в каталоге Описание Производители
TL431

100 мА, регулируемый прецизионный шунтирующий регулятор

Unisonic Technologies
Unisonic Technologies
IRF840

8 А, 500 В, N-канальный МОП-транзистор

Vishay
Vishay
LM317

Линейный стабилизатор напряжения, 1,5 А

STMicroelectronics
STMicroelectronics

DataSheet26.com    |    2020    |

  Контакты    |    Поиск