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PDF NSR15DW1 Data sheet ( Hoja de datos )
| Número de pieza | NSR15DW1 | |
| Descripción | Dual RF Schottky Diode | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
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NSR15DW1
Dual RF Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
• Low Capacitance (<1 pF)
• Low VF (390 mV typical @ 1 mA)
• Low VFD (1 mV typical @ 1 mA)
• Pb−Free Package is Available
Benefits
• Reduced Parasitic Losses
• Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Symbol
Max
Unit
Peak Reverse Voltage
VR
Forward Current
IF
Operating and Storage Temperature Range TJ, Tstg
ESD Rating: Class 1 per Human Body Model
ESD Rating: Class A per Machine Model
15
30
−65 to +150
V
mA
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Value Unit
Maximum Thermal Resistance,
Junction−to−Ambient
RqJA
500 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
65 4
12 3
SC−88
CASE 419B
1 STYLE 21
MARKING DIAGRAM
R5 M G
G
1
R5 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSR15DW1T1
SC−88 3000/Tape & Reel
NSR15DW1T1G SC−88 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 2
1
Publication Order Number:
NSR15DW1/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NSR15DW1.PDF ] | |
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