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PDF NSS12200WT1G Data sheet ( Hoja de datos )
| Número de pieza | NSS12200WT1G | |
| Descripción | Low VCE(sat) PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS12200WT1G
12 V, 3 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• High Current Capability (3 A)
• High Power Handling (Up to 650 mW)
• Low VCE(s) (170 mV Typical @ 1 A)
• Small Size
• This is a Pb−Free Device
Benefits
• High Specific Current and Power Capability Reduces Required PCB Area
• Reduced Parasitic Losses Increases Battery Life
http://onsemi.com
12 VOLTS
3.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 163 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
1
SC−88/SOT−363
CASE 419B
STYLE 20
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
VCEO
−12 Vdc
Collector-Base Voltage
VCBO
−12 Vdc
Emitter-Base Voltage
VEBO
−5.0
Vdc
Collector Current − Continuous
Collector Current − Peak
IC
ICM
−2.0
−3.0
Adc
Electrostatic Discharge
ESD
HBM Class 3
MM Class C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
DEVICE MARKING
6
V2M
G
1
V2 = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSS12200WT1G
SOT−363 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS12200W/D
1 page  
NSS12200WT1G
PACKAGE DIMENSIONS
D
e
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE V
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
654
HE −E−
123
b 6 PL
0.2 (0.008) M E M
A3
A
C
MILLIMETERS
INCHES
DIM MIN NOM MAX MIN NOM MAX
A 0.80 0.95 1.10 0.031 0.037 0.043
A1 0.00 0.05 0.10 0.000 0.002 0.004
A3 0.20 REF
0.008 REF
b 0.10 0.21 0.30 0.004 0.008 0.012
C 0.10 0.14 0.25 0.004 0.005 0.010
D 1.80 2.00 2.20 0.070 0.078 0.086
E 1.15 1.25 1.35 0.045 0.049 0.053
e 0.65 BSC
0.026 BSC
L 0.10 0.20 0.30 0.004 0.008 0.012
HE 2.00 2.10 2.20 0.078 0.082 0.086
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
A1 L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.40
0.0157
0.65
0.025
1.9
0.0748
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NSS12200WT1G.PDF ] | |
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