NSS20200LT1G PDF даташит
Спецификация NSS20200LT1G изготовлена «ON Semiconductor» и имеет функцию, называемую «Low VCE(sat) PNP Transistor». |
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Детали детали
Номер произв | NSS20200LT1G |
Описание | Low VCE(sat) PNP Transistor |
Производители | ON Semiconductor |
логотип |
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NSS20200LT1G
20 V, 4.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
−20
−20
−7.0
−2.0
−4.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
460 mW
3.7 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
270
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
540 mW
4.3 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
230
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
710 mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz. copper traces.
2. FR−4 @ 500 mm2, 1 oz. copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2006
September, 2006 − Rev. 0
1
http://onsemi.com
−20 VOLTS
4.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 65 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
DEVICE MARKING
VC MG
G
1
VC = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NSS20200LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NSS20200L/D
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NSS20200LT1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
Emitter Cutoff Current
(VEB = −7.0 Vdc)
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −1.0 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.200 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.1 A)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −1.0 A, VCE = −2.0 V)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
Input Capacitance (VEB = 0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = 3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle ≤ 2%.
5. Guaranteed by design but not tested.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cibo
Cobo
td
tr
ts
tf
Min
−20
−20
−7.0
−
−
250
250
180
150
−
−
−
−
−
−
100
−
−
−
−
−
−
Typ Max Unit
Vdc
−−
Vdc
−−
Vdc
−−
mAdc
− −0.1
mAdc
− −0.1
−−
300 −
−−
−−
−0.008
−0.065
−0.100
−0.130
−0.013
−0.090
−0.120
−0.180
− −0.900
− −0.900
−−
− 330
− 100
V
V
V
MHz
pF
pF
− 60 ns
− 120 ns
− 300 ns
− 130 ns
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NSS20200LT1G
0.25
IC/IB = 10
0.2
0.15
0.1
VCE(sat) = 150°C
25°C
−55°C
0.05
0
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
10
800
750 150°C (5.0 V)
700
650 150°C (2.0 V)
600
550
500
450
25°C (5.0 V)
400 25°C (2.0 V)
350
300
250
−55°C (5.0 V)
200
150
−55°C (2.0 V)
100
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs. Collector
Current
10
1.0
0.9 VCE = −1.0 V
−55°C
0.8
0.7 25°C
0.6
0.5
0.4 150°C
0.3
0.2
0.1
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
10
0.35
IC/IB = 100
0.3
VCE(sat) = 150°C
0.25
−55°C 25°C
0.2
0.15
0.1
0.05
0
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
1.1
IC/IB = 10
1.0
0.9
−55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.001
0.01
0.1
1.0
10
IC, COLLECTOR CURRENT (A)
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.0
10 mA
0.8
100 mA
VCE (V) IC = 500 mA
300 mA
0.6
0.4
0.2
0
0.01
0.1 1.0
10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
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NSS20200LT1G | Low VCE(sat) PNP Transistor | ON Semiconductor |
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