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PDF NSS20300MR6T1G Data sheet ( Hoja de datos )
| Número de pieza | NSS20300MR6T1G | |
| Descripción | PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS20300MR6T1G
20 V, 5 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−20 Vdc
−30 Vdc
−6.0 Vdc
−3.0 Adc
−5.0 A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
545 mW
4.3 mW/°C
Thermal Resistance,
Junction−to−Ambient
RθJA (Note 1)
230
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
Thermal Resistance,
Junction−to−Ambient
PD (Note 2)
106
W
8.5 mW/°C
RθJA (Note 2)
118
°C/W
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec.)
RθJL (Note 1)
RθJL (Note 2)
PDsingle
(Note 2)
48
40
1.75
°C/W
°C/W
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ 100 mm2, 2 oz copper traces.
2. FR−4 @ 500 mm2, 2 oz copper traces.
http://onsemi.com
20 VOLTS
5.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 78 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
32 1
4
56
CASE 318G
TSOP−6
STYLE 6
DEVICE MARKING
VS1 MG
G
VS1 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping†
NSS20300MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 0
1
Publication Order Number:
NSS20300MR6/D
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet NSS20300MR6T1G.PDF ] | |
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