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NSS20500UW3T2G PDF даташит

Спецификация NSS20500UW3T2G изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low VCE(sat) PNP Transistor».

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Номер произв NSS20500UW3T2G
Описание Low VCE(sat) PNP Transistor
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NSS20500UW3T2G Даташит, Описание, Даташиты
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NSS20500UW3T2G
20 V, 7.0 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical applications are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−20 Vdc
−20 Vdc
−7.0 Vdc
−5.0 Adc
−7.0 A
HBM Class 3B
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 1)
875 mW
7.0 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
143
°C/W
Total Device Dissipation, TA = 25°C
Derate above 25°C
PD (Note 2)
1.5 W
11.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
85
°C/W
Thermal Resistance,
Junction−to−Lead #1
RqJL (Note 2)
23
°C/W
Total Device Dissipation
(Single Pulse < 10 sec)
PDsingle
(Notes 2 & 3)
3.0
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
http://onsemi.com
−20 VOLTS
7.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 50 mW
COLLECTOR
3
1
BASE
2
EMITTER
2
1
3
WDFN3
CASE 506AU
MARKING DIAGRAM
VC M
G
1
VC = Specific Device Code
M = Date Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
NSS20500UW3T2G WDFN3
(Pb−Free)
Shipping
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
1
Publication Order Number:
NSS20500UW3/D









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NSS20500UW3T2G Даташит, Описание, Даташиты
NSS20500UW3T2G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mAdc, IB = 0)
V(BR)CEO
Collector −Base Breakdown Voltage
(IC = −0.1 mAdc, IE = 0)
V(BR)CBO
Emitter −Base Breakdown Voltage
(IE = −0.1 mAdc, IC = 0)
V(BR)EBO
Collector Cutoff Current
(VCB = −20 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VEB = −7.0 Vdc)
IEBO
ON CHARACTERISTICS
DC Current Gain (Note 4)
(IC = −10 mA, VCE = −2.0 V)
(IC = −500 mA, VCE = −2.0 V)
(IC = −1.0 A, VCE = −2.0 V)
(IC = −2.0 A, VCE = −2.0 V)
(IC = −3.0 A, VCE = −2.0 V)
Collector −Emitter Saturation Voltage (Note 4)
(IC = −0.1 A, IB = −0.010 A) (Note 5)
(IC = −1.0 A, IB = −0.100 A)
(IC = −1.0 A, IB = −0.010 A)
(IC = −2.0 A, IB = −0.020 A)
(IC = −3.0 A, IB = −0.030 A)
(IC = −4.0 A, IB = −0.400 A)
Base −Emitter Saturation Voltage (Note 4)
(IC = −1.0 A, IB = −0.01 A)
hFE
VCE(sat)
VBE(sat)
Base −Emitter Turn−on Voltage (Note 4)
(IC = −2.0 A, VCE = −3.0 V)
VBE(on)
Cutoff Frequency
(IC = −100 mA, VCE = −5.0 V, f = 100 MHz)
fT
Input Capacitance (VEB = −0.5 V, f = 1.0 MHz)
Output Capacitance (VCB = −3.0 V, f = 1.0 MHz)
SWITCHING CHARACTERISTICS
Cibo
Cobo
Delay (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Rise (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Storage (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
Fall (VCC = −15 V, IC = 750 mA, IB1 = 15 mA)
4. Pulsed Condition: Pulse Width = 300 msec, Duty Cycle 2%.
5. Guaranteed by design but not tested.
td
tr
ts
tf
Min
−20
−20
−7.0
250
250
220
200
180
100
Typical
Max
−−
−−
−−
− −0.1
− −0.1
300
300
250
−0.010
−0.050
−0.080
−0.150
−0.200
−0.270
0.76
0.80
−0.015
−0.070
−0.100
−0.170
−0.240
−0.260
−0.900
−0.900
475
180
− 100
− 150
− 350
− 200
Unit
Vdc
Vdc
Vdc
mAdc
mAdc
V
V
V
MHz
pF
pF
ns
ns
ns
ns
http://onsemi.com
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NSS20500UW3T2G Даташит, Описание, Даташиты
NSS20500UW3T2G
0.5
IC/IB = 10
0.4
0.3
VCE(sat) = 150°C
0.2
0.1
0
0.001
25°C
−55°C
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 1. Collector Emitter Saturation Voltage
vs. Collector Current
3.5
IC/IB = 100
3.0
2.5
2.0
1.5 VCE(sat) = −55°C
1.0
0.5
0
0.001
150°C
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
25°C
10
Figure 2. Collector Emitter Saturation Voltage
vs. Collector Current
850
750
650
550
450
350
250
150
50
0.001
150°C (5 V)
150°C (2 V)
25°C (5 V)
25°C (2 V)
−55°C (5 V)
−55°C (2 V)
0.01 0.1
1
IC, COLLECTOR CURRENT (A)
Figure 3. DC Current Gain vs.
Collector Current
1.4
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
10 0.001
0.01 0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 4. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0 VCE = −1.0 V
0.9 −55°C
0.8
0.7 25°C
0.6
0.5 150°C
0.4
0.3
0.2
0.1
0.001
0.01
0.1
1.0
IC, COLLECTOR CURRENT (A)
10
Figure 5. Base Emitter Turn−On Voltage vs.
Collector Current
1.0
10 mA
0.8
100 mA 300 mA
IC = 500 mA
0.6
0.4
0.2
0
0.01
0.1 1.0
10
IB, BASE CURRENT (mA)
Figure 6. Saturation Region
100
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Номер в каталогеОписаниеПроизводители
NSS20500UW3T2GLow VCE(sat) PNP TransistorON Semiconductor
ON Semiconductor

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