|
|
PDF NSS30100LT1G Data sheet ( Hoja de datos )
| Número de pieza | NSS30100LT1G | |
| Descripción | Low Vce(sat) PNP Transistor | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NSS30100LT1G (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
NSS30100LT1G
30 V, 2 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
−30
−50
−5.0
−1.0
−2.0
Vdc
Vdc
Vdc
A
A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
310 mW
2.5 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 1)
403
°C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
710 mW
5.7 mW/°C
Thermal Resistance,
Junction to Ambient
RθJA (Note 2)
176
°C/W
Total Device Dissipation
(Single Pulse < 10 sec.)
PDsingle
(Note 3)
575 mW
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad.
2. FR−4 @ 1.0 X 1.0 inch Pad.
3. Refer to Figure 8.
http://onsemi.com
30 VOLTS
2.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 200 mW
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SOT−23 (TO−236)
CASE 318
STYLE 6
DEVICE MARKING
3
VS4
12
VS4 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NSS30100LT1G SOT−23 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
1
Publication Order Number:
NSS30100L/D
1 page  
NSS30100LT1G
PACKAGE DIMENSIONS
A
L
3
BS
12
VG
C
DH
SOT−23 (TO−236)
CASE 318−08
ISSUE AH
KJ
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−03 AND −07 OBSOLETE, NEW STANDARD
318−08.
INCHES
DIM MIN MAX
A 0.1102 0.1197
B 0.0472 0.0551
C 0.0350 0.0440
D 0.0150 0.0200
G 0.0701 0.0807
H 0.0005 0.0040
J 0.0034 0.0070
K 0.0140 0.0285
L 0.0350 0.0401
S 0.0830 0.1039
V 0.0177 0.0236
MILLIMETERS
MIN MAX
2.80 3.04
1.20 1.40
0.89 1.11
0.37 0.50
1.78 2.04
0.013 0.100
0.085 0.177
0.35 0.69
0.89 1.02
2.10 2.64
0.45 0.60
STYLE 6:
PIN 1.
2.
3.
BASE
EMITTER
COLLECTOR
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
0.9
0.035
2.0
0.079
0.8
0.031
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NSS30100LT1G.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NSS30100LT1G | Low Vce(sat) PNP Transistor | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |