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PDF NSS35200CF8T1G Data sheet ( Hoja de datos )
| Número de pieza | NSS35200CF8T1G | |
| Descripción | High Current Surface Mount PNP Silicon Low VCE-SAT Switching Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS35200CF8T1G
35 V, 7 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
Features
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−35 Vdc
−55 Vdc
−5.0 Vdc
−2.0 Adc
−7.0 A
HBM Class 3
MM Class C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 1)
635 mW
5.1 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 1)
200 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD
(Note 2)
1.35 W
11 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
(Note 2)
90 °C/W
Thermal Resistance, Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 sec)
RqJL
PDsingle
(Notes 2 & 3)
15
2.75
°C/W
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to
+150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm2, 1 oz copper traces.
2. FR−4 @ 500 mm2, 1 oz copper traces.
3. Thermal response.
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 5
1
http://onsemi.com
35 VOLTS
7.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 78 mW
COLLECTOR
1, 2, 3, 6, 7, 8
4
BASE
5
EMITTER
ChipFET]
CASE 1206A
STYLE 4
PIN
CONNECTIONS
C8
C7
C6
E5
1C
2C
3C
4B
MARKING
DIAGRAM
18
27
36
45
G4 = Specific Device Code
M = Month Code
G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NSS35200CF8T1G
ChipFET
(Pb−Free)
3000/
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NSS35200CF8T1G/D
1 page  
NSS35200CF8T1G
PACKAGE DIMENSIONS
ChipFET
CASE 1206A−03
ISSUE PRELIMINARY
A
8765
SB
1234
LD
G
M
J
C
0.05 (0.002)
K
5678
4321
STYLE 4:
PIN 1. COLLECTOR
2. COLLECTOR
3. COLLECTOR
4. BASE
5. EMITTER
6. COLLECTOR
7. COLLECTOR
8. COLLECTOR
0.457
0.018
2.032
0.08
SOLDERING FOOTPRINT*
0.635
0.025
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MOLD GATE BURRS SHALL NOT EXCEED
0.13 MM PER SIDE.
4. LEADFRAME TO MOLDED BODY OFFSET
IN HORIZONTAL AND VERTICAL SHALL
NOT EXCEED 0.08 MM.
5. DIMENSIONS A AND B EXCLUSIVE OF
MOLD GATE BURRS.
6. NO MOLD FLASH ALLOWED ON THE TOP
AND BOTTOM LEAD SURFACE.
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
A 2.95 3.10 0.116 0.122
B 1.55 1.70 0.061 0.067
C 1.00 1.10 0.039 0.043
D 0.25 0.35 0.010 0.014
G 0.65 BSC 0.025 BSC
J 0.10 0.20 0.004 0.008
K 0.28 0.42 0.011 0.017
L 0.55 BSC 0.022 BSC
M 5 ° NOM
5 ° NOM
S 1.80 2.00 0.072 0.080
2.032
0.08
1.727
0.068
0.66
0.026
0.711
0.028
Basic
ǒ ǓSCALE 20:1
mm
inches
0.457
0.018
0.66
0.026
0.711
0.028
Style 4
0.178
0.007
ǒ ǓSCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
5
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