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PDF NSS35200MR6T1G Data sheet ( Hoja de datos )
| Número de pieza | NSS35200MR6T1G | |
| Descripción | Low VCE(sat) PNP Transistor | |
| Fabricantes | ON Semiconductor | |
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NSS35200MR6T1G
35 V, 5 A, Low VCE(sat)
PNP Transistor
ON Semiconductor’s e2PowerEdge family of low VCE(sat)
transistors are miniature surface mount devices featuring ultra low
saturation voltage (VCE(sat)) and high current gain capability. These
are designed for use in low voltage, high speed switching applications
where affordable efficient energy control is important.
Typical application are DC−DC converters and power management
in portable and battery powered products such as cellular and cordless
phones, PDAs, computers, printers, digital cameras and MP3 players.
Other applications are low voltage motor controls in mass storage
products such as disc drives and tape drives. In the automotive
industry they can be used in air bag deployment and in the instrument
cluster. The high current gain allows e2PowerEdge devices to be
driven directly from PMU’s control outputs, and the Linear Gain
(Beta) makes them ideal components in analog amplifiers.
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
Electrostatic Discharge
VCEO
VCBO
VEBO
IC
ICM
ESD
−35 Vdc
−55 Vdc
−5.0
Vdc
−2.0
Adc
−5.0
A
HBM Class 3
MM Class C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
http://onsemi.com
35 VOLTS
5.0 AMPS
PNP LOW VCE(sat) TRANSISTOR
EQUIVALENT RDS(on) 100 mW
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
6 54
1 23
TSOP−6
CASE 318G
STYLE 6
DEVICE MARKING
VS8M
VS8 = Specific Device Code
M = Date Code
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 0
ORDERING INFORMATION
Device
Package
Shipping†
NSS35200MR6T1G TSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1 Publication Order Number:
NSS35200MR6/D
1 page  
225
200
175
150
125
100
75
50
25
0
0
NSS35200MR6T1G
10
1 s 100 ms 10 ms 1 ms 100 ms
1.0
DC
0.1
SINGLE PULSE AT Tamb = 25°C
0.01
5.0 10 15 20 25 30 35
0.1
1.0
10
VCB, COLLECTOR BASE VOLTAGE (VOLTS)
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 7. Output Capacitance
Figure 8. Safe Operating Area
100
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
SINGLE PULSE
0.001
0.00001
0.0001
0.001
0.01 0.1
t, TIME (sec)
1.0
Figure 9. Normalized Thermal Response
10
100 1000
http://onsemi.com
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