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Número de pieza | NST489AMT1 | |
Descripción | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor | |
Fabricantes | ON Semiconductor | |
Logotipo | ||
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NST489AMT1
High Current Surface Mount
NPN Silicon Low VCE(sat)
Switching Transistor for
Load Management in
Portable Applications
Features
• Pb−Free Package is Available
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max Unit
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current − Continuous
Collector Current − Peak
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
ICM
30 V
50 V
5.0 V
2.0 A
3.0 A
Characteristic
Symbol
Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 1)
535 mW
4.3 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 1)
234 °C/W
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD (Note 2)
1.180
9.4
W
mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA (Note 2)
106 °C/W
Thermal Resistance,
Junction−to−Lead #1
Total Device Dissipation
(Single Pulse < 10 s)
RqJL (Note 1)
RqJL (Note 2)
PDsingle
(Notes 2 and 3)
110
50
1.75
°C/W
°C/W
W
Junction and Storage
Temperature Range
TJ, Tstg
−55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 with 1 oz and 3.9 mm2 of copper area.
2. FR−4 with 1 oz and 645 mm2 of copper area.
3. Refer to Figure 8.
http://onsemi.com
30 VOLTS, 3.0 AMPS
NPN TRANSISTOR
COLLECTOR
1, 2, 5, 6
3
BASE
4
EMITTER
6 54
1 23
TSOP−6
CASE 318G
STYLE 6
DEVICE MARKING
N2 M G
G
N2 = Specific Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending upon
manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NST489AMT1 TSSOP−6 3000/Tape & Reel
NST489AMT1G TSSOP−6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 7
1
Publication Order Number:
NST489AMT1/D
1 page |
Páginas | Total 4 Páginas | |
PDF Descargar | [ Datasheet NST489AMT1.PDF ] |
Número de pieza | Descripción | Fabricantes |
NST489AMT1 | High Current Surface Mount NPN Silicon Low VCE(sat) Switching Transistor | ON Semiconductor |
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