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NTD4805N PDF даташит

Спецификация NTD4805N изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Power MOSFET ( Transistor )».

Детали детали

Номер произв NTD4805N
Описание Power MOSFET ( Transistor )
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTD4805N Даташит, Описание, Даташиты
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NTD4805N
Power MOSFET
30 V, 88 A, Single N−Channel, DPAK/IPAK
Features
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are Pb−Free Devices
Applications
CPU Power Delivery
DC−DC Converters
Low Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (RqJA) (Note 1)
Power Dissipation
(RqJA) (Note 1)
Continuous Drain
Current (RqJA) (Note 2)
Power Dissipation
(RqJA) (Note 2)
Continuous Drain
Current (RqJC)
(Note 1)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
VDSS
VGS
ID
PD
ID
PD
ID
30
"20
16
12.6
2.24
12.6
9.8
1.35
88
68
V
V
A
W
A
W
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Pulsed Drain Current tp=10ms TA = 25°C
Current Limited by Package
TA = 25°C
Operating Junction and Storage Temperature
PD
IDM
IDmaxPkg
TJ, Tstg
66
175
45
−55 to
175
W
A
A
°C
Source Current (Body Diode)
Drain to Source dV/dt
IS
dV/dt
55 A
6.0 V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 24 A, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8from case for 10 s)
EAS 288 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(on) MAX
5.0 mW @ 10 V
7.4 mW @ 4.5 V
D
ID MAX
88 A
N−Channel
G
S
4
4
4
12
3
CASE 369C
DPAK
(Bent Lead)
STYLE 2
1 23
1
2
3
CASE 369AC CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
4
Drain
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4805N = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 1
1
Publication Order Number:
NTD4805N/D









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NTD4805N Даташит, Описание, Даташиты
NTD4805N
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Junction−to−Case (Drain)
Junction−to−TAB (Drain)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − Steady State (Note 2)
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS
V(BR)DSS/TJ
VGS = 0 V, ID = 250 mA
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
ON CHARACTERISTICS (Note 3)
IDSS
IGSS
VGS = 0 V,
VDS = 24 V
TJ = 25°C
TJ = 125°C
VDS = 0 V, VGS = "20 V
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Forward Transconductance
CHARGES AND CAPACITANCES
VGS(TH)
VGS(TH)/TJ
RDS(on)
gFS
VGS = VDS, ID = 250 mA
VGS = 10 to
11.5 V
ID = 30 A
ID = 15 A
VGS = 4.5 V
ID = 30 A
ID = 15 A
VDS = 15 V, ID = 15 A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Threshold Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
Total Gate Charge
Ciss
Coss
Crss
QG(TOT)
QG(TH)
QGS
QGD
QG(TOT)
SWITCHING CHARACTERISTICS (Note 4)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
Turn−On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
Fall Time
tf
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
Symbol
RqJC
RqJC−TAB
RqJA
RqJA
Value
2.25
3.5
67
111
Unit
°C/W
Min Typ Max Unit
30
27
V
mV/°C
1.0
10
"100
mA
nA
1.5 2.5 V
5.86 mV/°C
4.3 5.0 mW
4.2
6.0 7.4
5.8
17 S
2865
pF
610
338
20.5 26 nC
4.05
8.28
8.36
48 nC
17.2 ns
20.3
20.8
8.0
10.8 ns
20.5
30.8
4.4
http://onsemi.com
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NTD4805N Даташит, Описание, Даташиты
NTD4805N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
VSD
VGS = 0 V,
TJ = 25°C
IS = 30 A
TJ = 125°C
tRR
ta VGS = 0 V, dIs/dt = 100 A/ms,
tb IS = 30 A
Reverse Recovery Time
PACKAGE PARASITIC VALUES
QRR
Source Inductance
Drain Inductance, DPAK
Drain Inductance, IPAK
Gate Inductance
Gate Resistance
LS
LD
LD TA = 25°C
LG
RG
Min
Typ Max
0.87 1.2
0.76
25.7
13.1
12.6
18
2.49
0.0164
1.88
3.46
0.8
Unit
V
ns
nC
nH
W
http://onsemi.com
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NTD4805NPower MOSFET ( Transistor )ON Semiconductor
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