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PDF NTD4813NH Data sheet ( Hoja de datos )
| Número de pieza | NTD4813NH | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD4813NH
Power MOSFET
30 V, 40 A, Single N−Channel, DPAK/IPAK
Features
• Low RDS(on) to Minimize Conduction Losses
• Low Capacitance to Minimize Driver Losses
• Optimized Gate Charge to Minimize Switching Losses
• Low RG
• These are Pb−Free Devices
Applications
• CPU Power Delivery
• DC−DC Converters
• High Side Switching
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJA
(Note 1)
VDSS 30 V
VGS ±20 V
TA = 25°C
ID
9.0 A
TA = 85°C
7.0
Power Dissipation
RqJA (Note 1)
Continuous Drain
Current RqJA
(Note 2)
Power Dissipation
RqJA (Note 2)
Continuous Drain
Current RqJC
(Note 1)
TA = 25°C
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TC = 25°C
TC = 85°C
PD
ID
PD
ID
1.94 W
7.6 A
5.9
1.27 W
40 A
31
Power Dissipation
RqJC (Note 1)
Pulsed Drain
Current
TC = 25°C
tp=10ms TA = 25°C
PD
IDM
35.3 W
90 A
Current Limited by Package
TA = 25°C
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
IDmaxPkg
TJ,
TSTG
IS
dV/dt
35
−55 to
+175
29
6
A
°C
A
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
IL = 17.2 Apk, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
EAS
44.4 mJ
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
http://onsemi.com
V(BR)DSS
30 V
RDS(ON) MAX
13 mW @ 10 V
25.9 mW @ 4.5 V
ID MAX
40 A
D
G
S
N−CHANNEL MOSFET
4
4
4
12
3
DPAK
CASE 369C
(Bent Lead)
STYLE 2
1 23
1
2
3
3 IPAK
IPAK
CASE 369AC CASE 369D
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
4
Drain
2
1 Drain 3
Gate Source
1 23
Gate Drain Source
1
23
Gate Drain Source
Y = Year
WW = Work Week
4813NH = Device Code
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
© Semiconductor Components Industries, LLC, 2006
December, 2006 − Rev. 0
1
Publication Order Number:
NTD4813NH/D
1 page  
NTD4813NH
TYPICAL PERFORMANCE CURVES
1200
1000
Ciss
VGS = 0 V
TJ = 25°C
15
12
800
600
400
Coss
200
0 Crss
05
10 15 20 25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
VDS
9
6
Q1
3
0
30 0 2
25
QT 20
VGS
15
10
Q2
ID = 30 A 5
TJ = 25°C
0
4 6 8 10 12 14 16 18 20
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
100
td(on)
td(off)
10
tr
tf
1
1
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10 100
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
35
VGS = 0 V
30 TJ = 25°C
25
20
15
10
5
0
0.2 0.4 0.6 0.8 1.0 1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
10
1
0.1
0.1
VGS = 20 V
SINGLE PULSE
TC = 25°C
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
100 ms
1 ms
10 ms
dc
1 10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
45 ID = 17.2 A
40
35
30
25
20
15
10
5
0
25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
http://onsemi.com
5
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| PDF Descargar | [ Datasheet NTD4813NH.PDF ] | |
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