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PDF NTGD3133P Data sheet ( Hoja de datos )
| Número de pieza | NTGD3133P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTGD3133P
Power MOSFET
−20 V, −2.5 A, P−Channel, TSOP−6 Dual
Features
• Reduced Gate Charge for Fast Switching
• −2.5 V Gate Rating
• Leading Edge Trench Technology for Low On Resistance
• Independent Devices to Provide Design Flexibility
• This is a Pb−Free Device
Applications
• Li−Ion Battery Charging
• Load Switch / Power Switching
• DC to DC Conversion
• Portable Devices like PDA’s, Cellular Phones, and Hard Drives
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value
Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t≤5s
Steady
State
Continuous Drain
Current (Note 2)
t≤5s
Steady
State
Power Dissipation
(Note 2)
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
TA = 25°C
TA = 85°C
TA = 25°C
VDSS
VGS
ID
PD
ID
PD
−20
±12
−2.3
−1.6
−2.5
1.1
1.3
−1.6
−1.2
0.56
V
V
A
W
A
W
Pulsed Drain Current
tp = 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
±7.0
−55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
IS −0.8 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces).
2. Surface Mounted on FR4 Board using the minimum recommended pad size.
© Semiconductor Components Industries, LLC, 2006
July, 2006 − Rev. 0
1
http://onsemi.com
V(BR)DSS
−20 V
RDS(on) MAX
145 mW @ −4.5 V
200 mW @ −2.5 V
ID MAX
−2.5 A
S1
G1
S2
G2
D1 D2
P−CHANNEL MOSFET P−CHANNEL MOSFET
MARKING
DIAGRAM
1
TSOP6
CASE 318G
SC MG
G
SC = Specific Device Code 1
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN CONNECTION
G1 1
S2 2
G2 3
6 D1
5 S1
4 D2
(Top View)
ORDERING INFORMATION
Device
Package
Shipping†
NTGD3133PT1G TSOP6 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTGD3133P/D
1 page  
NTGD3133P
D
65 4
HE
12 3
e
0.05 (0.002)
A1
E
b
A
PACKAGE DIMENSIONS
TSOP−6
CASE 318G−02
ISSUE S
q
c
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. DIMENSIONS A AND B DO NOT INCLUDE
MOLD FLASH, PROTRUSIONS, OR GATE
BURRS.
MILLIMETERS
DIM MIN NOM MAX
A 0.90
1.00
1.10
A1 0.01
0.06
0.10
b 0.25
0.38
0.50
c 0.10 0.18 0.26
D 2.90
3.00
3.10
E 1.30
1.50
1.70
e 0.85 0.95 1.05
L 0.20
0.40
0.60
H E 2.50
q 0°
2.75
−
3.00
10°
MIN
0.035
0.001
0.010
0.004
0.114
0.051
0.034
0.008
0.099
0°
INCHES
NOM
0.039
0.002
0.014
0.007
0.118
0.059
0.037
0.016
0.108
−
MAX
0.043
0.004
0.020
0.010
0.122
0.067
0.041
0.024
0.118
10°
SOLDERING FOOTPRINT*
2.4
0.094
1.9
0.075
0.95
0.037
0.95
0.037
0.7
0.028
1.0
0.039
ǒ ǓSCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada
Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada
Email: [email protected]
N. American Technical Support: 800−282−9855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81−3−5773−3850
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
http://onsemi.com
5
NTGD3133P/D
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