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PDF NTLGD3502N Data sheet ( Hoja de datos )
| Número de pieza | NTLGD3502N | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTLGD3502N
Power MOSFET
20 V, 5.8 A/4.6 A Dual N-Channel,
DFN6 3x3 mm Package
Features
•ăExposed Drain Package
•ăExcellent Thermal Resistance for Superior Heat Dissipation
•ăLow Threshold Levels
•ăLow Profile (< 1 mm) Allows It to Fit Easily into Extremely Thin
Environments
•ăThis is a Pb-Free Device
Applications
•ăDC-DC Converters (Buck and Boost Circuits)
•ăPower Supplies
•ăHard Disk Drives
MOSFET I MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t ≤ 5.0 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±20
4.3
3.0
5.8
1.74
V
V
A
W
Pulsed Drain Current
t ≤10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
17.2
-55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.6 A
TL 260 °C
MOSFET II MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain
Current (Note 1)
Steady
State
Power Dissipation
(Note 1)
t ≤ 5.0 s
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
TA = 25°C
VDSS
VGS
ID
PD
20
±12
3.6
2.5
4.6
1.74
V
V
A
W
Pulsed Drain Current
t ≤10 ms
IDM
Operating Junction and Storage Temperature TJ, TSTG
13.8
-55 to
150
A
°C
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS 1.7 A
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface Mounted on FR4 Board using the minimum recommended pad size
of 30 mm2, 1 oz. Cu
©Ă Semiconductor Components Industries, LLC, 2007
July, 2007 - Rev. 1
1
http://onsemi.com
V(BR)DSS
20 V
MOSFET I
RDS(on) MAX
60 mW @ 4.5 V
ID MAX
5.8 A
V(BR)DSS
20 V
MOSFET II
RDS(on) MAX
90 mW @ 4.5 V
ID MAX
4.6 A
4 Heatsink 2 1 2 3
3 12
Heatsink 1
1
6
2 6 54
5
1 = Gate 1
2, 5 = Drain 1/Source 2
3 = Gate 2
4 = Drain 2
6 = Source 1
MARKING
DIAGRAMS
DFN6
1 3502
1
CASE 506AG
AYWW
G
3502
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb-Free Package
ORDERING INFORMATION
Device
Package
Shipping†
NTLGD3502NT1G DFN6 3000/Tape & Reel
(Pb-free)
NTLGD3502NT2G DFN6 3000/Tape & Reel
(Pb-free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTLGD3502N/D
1 page  
NTLGD3502N
TYPICAL MOSFET I N-CHANNEL PERFORMANCE CURVES
(TJ = 25°C unless otherwise noted)
400 6 12
VGS = 0 V
TJ = 25°C
350
QT
300 VDS
10
250 CISS
200
4
QGS
QGD
VGS
8
6
150
100
50
0
0
COSS
CRSS
5 10 15 20 25
DRAIN-TO-SOURCE VOLTAGE (VOLTS)
Figure 7. Capacitance Variation
24
0
30 0
ID = 4.3 A
TJ = 25°C
2
0
1 23
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate-to-Source and
Drain-to-Source Voltage vs. Total Charge
100
VDD = 10 V
ID = 4.3 A
VGS = 4.5 V
10
VGS = 0 V
TJ = 125°C TJ = 25°C
tr
10
td(off)
td(on)
TJ = 150°C
1
tf
1
1
10
RG, GATE RESISTANCE (OHMS)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
TJ = -55°C
0.1
0.4 0.5 0.6 0.7 0.8 0.9 1.0
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
Figure 10. Diode Forward Voltage vs. Current
1
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
0.01
0.001
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01 0.1
t, TIME (s)
1
Figure 11. FET Thermal Response
10 100 1000
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