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PDF NTLJD2105L Data sheet ( Hoja de datos )

Número de pieza NTLJD2105L
Descripción Power MOSFET ( Transistor )
Fabricantes ON Semiconductor 
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NTLJD2105L
POWER MOSFET
8 V, 4.3 A, mCool] High Side Load Switch
with Level Shift, 2x2 mm WDFN Package
Features
WDFN 2x2 mm Package with Exposed Drain Pads Offers Excellent
Thermal Performance
Low RDS(on) P−Channel Load Switch with N−channel MOSFET for
Level Shift
N Channel Operated at 1.5 V Gate Drive Voltage Level
P Channel Operated at 1.5 V Supply Voltage
Same Footprint as SC88
Low Profile (<0.8 mm) Allows it to Fit Easily into Extremely Thin
Environments
ESD Protection
These are Pb−Free Devices
Applications
High Slide Load Switch with Level Shift
Optimized for Power Management in Ultra Portable Equipment
MOSFET(Q2) MAXIMUM RATINGS
(TJ = 25°C unless otherwise stated)
Parameter
Symbol Value Unit
Q2 Input Voltage (VDS, P−Channel)
Q1 On/Off Voltage (VGS, N−Channel)
Continuous Load
Current (Note 1)
Steady
State
TA = 25°C
TA = 85°C
Power Dissipation Steady TA = 25°C
(Note 1)
State
VIN
VON/OFF
IL
PD
8
6
4.3
3.1
1.56
V
V
A
W
Continuous Load
Current (Note 2)
Power Dissipation
(Note 2)
Steady
State
TA = 25°C
TA = 85°C
TA = 25°C
IL
PD
2.5 A
1.8
0.52 W
Pulsed Load
Current
tp = 10 ms
ILM 20 A
Operating Junction and Storage
Temperature
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode) (Note 2)
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
IS
TL
−2.7 A
260 °C
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[2 oz] including traces)
2. Surface−mounted on FR4 board using the minimum recommended pad size.
http://onsemi.com
VINMAX
20 V
RDS(on) MAX
50 mW @ 4.5 V
60 mW @ 2.5 V
80 mW @ 1.8 V
115 mW @ 1.5 V
IL MAX
4.3 A
4 2, 3
Q2
6
5 Q1
1
MARKING
DIAGRAM
Pin 1
WDFN6
CASE 506AZ
1
2
JN M
6
5
3G 4
JN = Specific Device Code
M = Date Code
G = Pb−Free Package
PIN CONNECTIONS
S1 1
D2 2
D2 3
D1/G2
D2
6 D1/G2
5 G1
4 S2
(Top View)
© Semiconductor Components Industries, LLC, 2006
November, 2006 − Rev. 0
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1 Publication Order Number:
NTLJD2105L/D

1 page




NTLJD2105L pdf
NTLJD2105L
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
1000
100 D = 0.5
0.2
0.1
10 0.05
0.02
0.01
1
0.1
0.000001
0.00001
SINGLE PULSE
0.0001
0.001
P(pk)
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
t1
t2
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
DUTY CYCLE, D = t1/t2
0.01 0.1 1 10 100 1000
t, TIME (sec)
Figure 11. Thermal Response
VIN
R1
4
6
Q2
2, 3
C1
6
VOUT
ON/OFF
CI
5
GND
Q1
1
R2
CO
LOAD
GND
Figure 12. Load Switch Application
Components
Description
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁR1
Pull−up Resistor
Typical 10 kW to 1.0 W*
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁR2
Optional Slew−Rate Control
Typical 0 kW to 100 kW*
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁCO, CI
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁC1
Output Capacitance
Optional In−Rush Current Control
Usually < 1.0 mF
Typical v 1000 pF
ÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁÁ*Minimum R1 value should be at least 10 x R2 to ensure Q1 turn−on.
Value
ORDERING INFORMATION
Device
Package
Shipping
NTLJD2105LTBG
WDFN6
(Pb−Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
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