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NUF2070MN PDF даташит

Спецификация NUF2070MN изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «2 Line Audio EMI Filter».

Детали детали

Номер произв NUF2070MN
Описание 2 Line Audio EMI Filter
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NUF2070MN Даташит, Описание, Даташиты
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NUF2070MN
2 Line Audio EMI Filter with
ESD Protection
NUF2070MN is a 2 line LC EMI filter array designed for audio
applications. It offers greater than −22.5 dB attenuation at frequencies
from 800 MHz to 5.0 GHz. This device also offers ESD
protection−clamping transients from static discharges and ESD
protection is provided across all capacitors.
Features
Provides EMI Filtering and ESD Protection
Integration of 10 Discretes
Compliance with IEC61000−4−2 (Level 4)
10 kV (Contact)
DFN8, 2x2 mm Package
Moisture Sensitivity Level 1
ESD Ratings: Machine Model = C
Human Body Model = 3B
Excellent Line Efficiency with Low Line Resistance < 3.5 W
This is a Pb−Free Device*
Applications
Wireless Phones
MP3s
PDAs
Digital Cameras
Portable DVDs
http://onsemi.com
L
1
Cd Cd
8
L
4
Cd Cd
5
(Top View)
MARKING
DIAGRAM
DFN8
1
CASE 506AA
U7 M
PLASTIC
4G
1
U7 = Specific Device Code
M = Date Code
G = Pb−Free Package
12 3 4
GND
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
87 6 5
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping
NUF2070MNT1G DFN8 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 0
1
Publication Order Number:
NUF2070MN/D









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NUF2070MN Даташит, Описание, Даташиты
NUF2070MN
MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
kV
10
Steady−State Power per Resistor
PR 180 mW
Steady−State Power per Package
PT 360 mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
Tstg
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 s)
TL 260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Test Conditions
Symbol
Min
Typ
Max Unit
Maximum Reverse Working Voltage
Breakdown Voltage
Leakage Current
Inductance
Series Resistance
Capacitance (Note 1, 3)
Cut−Off Frequency (Note 2)
IZ = 10 mA
IR = 1.0 mA
VRWM = 12 V
IF = 50 mA
Above this frequency,
appreciable attenuation occurs
VRWM
VBR
IR
L
RS
Cd
f3dB
13.7
15.7
1.0
10
2.4
64
50
12 V
17.7 V
100 nA
− nH
3.5 W
− pF
− MHz
1. Measured at 25°C, VR = 0 V, f = 1.0 MHz.
2. 50 W source and 50 W load termination.
3. Total line capacitance is 2 times the diode capacitance (Cd).
http://onsemi.com
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NUF2070MN Даташит, Описание, Даташиты
NUF2070MN
TYPICAL PERFORMANCE CURVES
(TA = 25°C unless otherwise specified)
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
−50
1.0E+06
10E+06
100E+06 1.0E+09
10E+09
FREQUENCY (Hz)
Figure 1. Insertion Loss Characteristics
0
−10
−20
−30
−40
−50
−60
−70
−80
1.0E+07
1.0E+08
1.0E+09
FREQUENCY (Hz)
Figure 2. Analog Cross Talk
1.0E+10
3.5
3.0
2.5
2.0
1.5
1.0
−40 −15 10 35 60 85
TEMPERATURE (°C)
Figure 3. Typical Resistance over Temperature
140
120
100
80
60
40
20
0
−12 −9 −6 −3 0 3 6 9 12
REVERSE VOLTAGE
Figure 4. Typical Line Capacitance vs. Reverse
Voltage
25
20
15
10
Mag
5X
0
10
R
100
1000
FREQUENCY (MHz)
Figure 5. Typical Impedance vs. Frequency
http://onsemi.com
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Номер в каталогеОписаниеПроизводители
NUF2070MN2 Line Audio EMI FilterON Semiconductor
ON Semiconductor

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