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NUF2240W1 PDF даташит

Спецификация NUF2240W1 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «2 Line EMI Filter».

Детали детали

Номер произв NUF2240W1
Описание 2 Line EMI Filter
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NUF2240W1 Даташит, Описание, Даташиты
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NUF2240W1
2 Line EMI Filter with ESD
Protection
This device is a 2 line EMI filter array for wireless applications.
Greater than −20 dB attenuation is obtained at 800 MHz. It also offers
ESD protection−clamping transients from static discharges.
ESD protection is provided across all capacitors.
Features
EMI Filtering and ESD Protection
Integration of 11 Discrete Components
Compliance with IEC61000−4−2 (Level 4)
> 8.0 kV (Contact)
SC−88/SOT−363 Package
Moisture Sensitivity Level 1
ESD Ratings:
Machine Model = C
Human Body Model = 3B
This is a Pb−Free Device
Benefits
Reduces EMI/RFI Emissions on a Data Line
Integrated Solution Offers Cost and Space Savings in a
SC−88/SOT−363 Package
Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
Integrated Solution Improves System Reliability
Applications
EMI Filtering and ESD Protection for Data Lines
Wireless Phones
PDAs and Handheld Products
Notebook Computers
LCD Displays
http://onsemi.com
Pin 6 Pin 5
Pin 4
Output(1) VCC Output(2)
Pin 1 Pin 2
Input(1) GND
Pin 3
Input(2)
MARKING
DIAGRAM
6
SC−88
1 CASE 419B
24 M G
G
1
24 = Specific Device Code
M = Month Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NUF2240W1T1G SC−88 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 1
1
Publication Order Number:
NUF2240W1/D









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NUF2240W1 Даташит, Описание, Даташиты
NUF2240W1
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Air Discharge
Contact Discharge
VPP
kV
15
8.0
Steady−State Power per Resistor
PR mW
Steady−State Power per Package
PT mW
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
VRWM
5.0 V
Breakdown Voltage
VBR IR = 1.0 mA
6.0 7.0
V
Leakage Current
IR VRWM = 3.0 V
1.0 mA
Resistance
RA IR = 20 mA 85 100 115 W
Capacitance (Notes 1 and 2)
Cd VR = 2.5 V, f = 1.0 MHz
17 pF
Cut−Off Frequency (Note 3)
f3dB Above this frequency,
appreciable attenuation occurs
125
MHz
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
http://onsemi.com
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NUF2240W1 Даташит, Описание, Даташиты
NUF2240W1
0
−5
−10
−15
−20
−25
−30
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
1.E+10
Figure 1. Insertion Loss Characteristic
(50 W Source and 50 W Lead Termination)
2
1.5
1
0.5
0
0
1234
REVERSE VOLTAGE (V)
Figure 2. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
5
110
108
106
104
102
100
98
96
94
92
90
−40
−20
0 20 40
TEMPERATURE (°C)
60 80
Figure 3. Typical Resistance over Temperature
http://onsemi.com
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