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NUF6105FC PDF даташит

Спецификация NUF6105FC изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «6 Channel EMI Pi-Filter Array».

Детали детали

Номер произв NUF6105FC
Описание 6 Channel EMI Pi-Filter Array
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NUF6105FC Даташит, Описание, Даташиты
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NUF6105FC
6 Channel EMI Pi−Filter
Array with ESD Protection
This device is a 6 channel EMI filter array for data lines. Greater
than −35 dB attenuation is obtained at frequencies from 800 MHz to
2.2 GHz. It also offers ESD protection − clamping transients from
static discharges to protect delicate data line circuitry.
Features
EMI Filtering and ESD Protection for Data Lines
Integration of 30 Discretes Offers Cost and Space Savings
Exceeds IEC61000−4−2 (Level 4) Specifications
Low Profile Flip−Chip Packaging
MSL 1
Pb−Free Package is Available
Typical Applications
EMI Filtering and ESD Protection for Data Lines
Cell Phones
Handheld Portables
Notebook Computers
MP3 Players
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Value
Unit
ESD Discharge IEC61000−4−2,
− Air Discharge
− Contact Discharge
Human Body Model
VPP
kV
30
30
16
DC Power per Resistor
PR 100 mW
DC Power per Package
PT 600 mW
Junction Temperature
TJ 150 °C
Operating Temperature Range
Top
−40 to +85
°C
Storage Temperature Range
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1
A1
D1
A2
D3
A3
D5
A4
D7
A5
D9
A6
D11
http://onsemi.com
CIRCUIT DESCRIPTION
R1
C1 C2
D2
C1
R2
C3 C4
R3
C5 C6
C2
D4
B1
C3
D6
R4
C7 C8
R5
C9 C10
C4
D8
B2
C5
D10
R6
C11 C12
C6
D12
B3
FLIP−CHIP
CASE 499D
PLASTIC
A1
MARKING DIAGRAM
NUF6105AYWWG
G
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
NUF6105FCT1 Flip−Chip 3000/Tape & Reel
NUF6105FCT1G Flip−Chip 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NUF6105FC/D









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NUF6105FC Даташит, Описание, Даташиты
NUF6105FC
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Characteristic
VRWM Maximum Reverse Working Voltage
VBR IZ = 10 mA
IR VRWM = 3.3 V per line
RI/O IR = 20 mA
Cd VR = 2.5 V, f = 1 MHz (Note 1 and 2)
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the diode capacitance (Cd).
Min Typ Max Unit
− − 5.0 V
6.0 7.0 8.0 V
− − 0.1 mA
80 100 120 W
− 27 − pF
TYPICAL PERFORMANCE CURVES
0
(TA = 25°C unless otherwise specified)
0
−5 −10
−10
−20
−15
−20 −30 Channel 3 to Channel 4
−25 Channel 1 or Channel 6
−30
−35 Channel 2 or Channel 5
−40
−45
−50
10
Channel 3
or Channel 4
100
1000
10000
FREQUENCY (MHz)
−40
Channel 1 to Channel 2
−50
−60
−70
−80
10
100 1000
FREQUENCY (MHz)
Figure 1. Insertion Loss Curve
(S21 Measurement)
Figure 2. Analog Crosstalk Curve
(S41 Measurement)
10000
2.0
1.5
1.0
0.5
0
0 1.0 2.0 3.0 4.0 5.0
REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance Cd at 2.5 V)
105
104
103
102
101
100
99
98
97
96
95
−40
−15 10
35
TEMPERATURE (°C)
60
Figure 4. Resistance Over Temperature
85
http://onsemi.com
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NUF6105FC Даташит, Описание, Даташиты
NUF6105FC
D: 6.92 V
@: 6.92 V
Figure 5. ESD Scope Trace Human Body Model (−8 kV)
D: 900 V
@: −900 V
Figure 6. ESD Scope Trace Human Body Model (+8 kV)
http://onsemi.com
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