NUF6406MN PDF даташит
Спецификация NUF6406MN изготовлена «ON Semiconductor» и имеет функцию, называемую «Low Capacitance 6 Line EMI Filter». |
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Детали детали
Номер произв | NUF6406MN |
Описание | Low Capacitance 6 Line EMI Filter |
Производители | ON Semiconductor |
логотип |
4 Pages
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NUF6406MN
Low Capacitance 6 Line
EMI Filter with ESD
Protection
This device is a 6 line EMI filter array for wireless applications.
Greater than −30 dB attenuation is obtained at frequencies from
800 MHz to 2.4 GHz. It also offers ESD protection−clamping
transients from static discharges. ESD protection is provided across all
capacitors.
Features
• EMI Filtering and ESD Protection
• Integration of 30 Discrete Components
• Compliance with IEC61000−4−2 (Level 4)
> 8.0 kV (Contact)
• DFN Package, 1.35 x 3.0 mm
• Moisture Sensitivity Level 1
• ESD Ratings:
Machine Model = C
Human Body Model = 3B
• This is a Pb−Free Device*
Benefits
• Reduces EMI/RFI Emissions on a Data Line
• Integrated Solution Offers Cost and Space Savings in a DFN Package
• Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass
Filter Response
• Integrated Solution Improves System Reliability
• Compatible Footprint to BGA or Flip−Chip Package
Applications
• EMI Filtering and ESD Protection for Data Lines
• Wireless Phones
• PDAs and Handheld Products
• Notebook Computers
• LCD Displays
1 2 3 4 56
GND
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1
Cd Cd
12
2
Cd Cd
11
3
Cd Cd
10
4
Cd Cd
9
5
Cd Cd
8
6
Cd Cd
7
(Top View)
12
1
DFN12
CASE 506AD
MARKING
DIAGRAM
1
64
06
MG
G
6406 = Specific Device Code
M = Month
G = Pb−Free Package
(Note: Microdot may be in either location)
12 11 10 9 8
(Bottom View)
7
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
ORDERING INFORMATION
Device
Package
Shipping†
NUF6406MNT1G DFN12 3000 / Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2005
June, 2005 − Rev. 2
1
Publication Order Number:
NUF6406MN/D
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NUF6406MN
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
ESD Discharge IEC61000−4−2
Contact Discharge
VPP
8.0 kV
Operating Temperature Range
TOP
−40 to 85
°C
Storage Temperature Range
TSTG
−55 to 150
°C
Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds)
TL
260 °C
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Maximum Reverse Working Voltage
VRWM
5.0 V
Breakdown Voltage
VBR IR = 1.0 mA
6.0 7.0
V
Leakage Current
IR VRWM = 3.0 V
1.0 mA
Resistance
RA IR = 20 mA 85 100 115 W
Capacitance (Notes 1 and 2)
Cd VR = 2.5 V, f = 1.0 MHz
13 16 pF
Cut−Off Frequency (Note 3)
f3dB Above this frequency,
appreciable attenuation occurs
138
MHz
1. Measured at 25°C, VR = 2.5 V, f = 1.0 MHz.
2. Total line capacitance is 2 times the Diode Capacitance (Cd).
3. 50 W source and 50 W load termination.
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NUF6406MN
0
−5
−10
−15
−20
−25
−30
−35
−40
−45
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
1.E+10
Figure 1. Insertion Loss Characteristic
0
10
−20
−30
−40
−50
−60
−70
−80
1.E+06
1.E+07
1.E+08
1.E+09
FREQUENCY (Hz)
Figure 2. Analog Crosstalk
1.E+10
2
1.5
1
0.5
0
012345
REVERSE VOLTAGE (V)
Figure 3. Typical Capacitance vs.
Reverse Biased Voltage
(Normalized Capacitance, Cd @ 2.5 V)
110
108
106
104
102
100
98
96
94
92
90
−40
−20 0
20 40
TEMPERATURE (°C)
60
Figure 4. Typical Resistance over
Temperature
80
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Номер в каталоге | Описание | Производители |
NUF6406MN | Low Capacitance 6 Line EMI Filter | ON Semiconductor |
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