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NUP45V6P5 PDF даташит

Спецификация NUP45V6P5 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «Low Capacitance Quad Array».

Детали детали

Номер произв NUP45V6P5
Описание Low Capacitance Quad Array
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NUP45V6P5 Даташит, Описание, Даташиты
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NUP45V6P5 Series
Product Preview
Low Capacitance
Quad Array for
ESD Protection
These integrated transient voltage suppressor devices (TVS) are
designed for applications requiring transient overvoltage protection.
They are intended to be used in sensitive equipment such as wireless
headsets, PDAs, digital cameras, computers, printers, communication
systems, medical equipment, and other applications. Their integrated
design provides very effective and reliable protection for four separate
lines using only one package. These devices are ideal for situations
where board space is at a premium.
Features
ESD Protection: IEC61000−4−2: Level 4
MILSTD 883C − Method 3015−6: Class 3
Four Separate Unidirectional Configurations for Protection
Low Leakage Current < 1 mA @ 3 V
Small SOT−953 SMT Package
Low Capacitance
These are Pb−Free Devices
Benefits
Provides Protection for ESD Industry Standards: IEC 61000, HBM
Protects Four Lines Against Transient Voltage Conditions
Minimize Power Consumption of the System
Minimize PCB Board Space
Typical Applications
Cellular and Portable Electronics
Serial and Parallel Ports
Microprocessor Based Equipment
Notebooks, Desktops, Servers
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15
2
34
SOT−953
CASE 526AB
MARKING DIAGRAM
xM
1
x = Specific Device Code
M = Date Code
G or G = Pb−Free Package
ORDERING INFORMATION
Device
Package
Shipping
NUP45V6P5T5G SOT−953
(Pb−Free)
8000 /
Tape & Reel
NUP46V8P5T5G SOT−953
(Pb−Free)
8000 /
Tape & Reel
NUP412VP5T5G SOT−953
(Pb−Free)
8000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
© Semiconductor Components Industries, LLC, 2006
October, 2006 − Rev. P5
1
Publication Order Number:
NUP45V6P5/D









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NUP45V6P5 Даташит, Описание, Даташиты
NUP45V6P5 Series
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
IPP
Uni−Directional
V
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Peak Power Dissipation (8 X 20 ms @ TA = 25°C) (Note 1)
NUP45V6P5
NUP46V8P5
NUP412VP5
PPK
W
14
30
65
Thermal Resistance Junction−to−Ambient
Above 25°C, Derate
RqJA
560 °C/W
4.5 mW/°C
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
Lead Solder Temperature (10 seconds duration)
Human Body Model (HBM)
Machine Model (MM)
IEC61000−4−2 Air (ESD)
IEC61000−4−2 Contact (ESD)
TJmax
TJ Tstg
TL
ESD
150
−55 to +150
260
16000
400
15000
8000
°C
°C
°C
V
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
ELECTRICAL CHARACTERISTICS (TA = 25°C)
Device
Device
Marking
Breakdown Voltage
VBR @ 1 mA (Volts)
Min Nom Max
NUP45V6P5
5 5.3 5.6 5.9
NUP46V8P5
6 6.47 6.8 7.14
NUP412VP5
2 11.4 12 12.7
1. Non−repetitive current per Figure 1.
2. Capacitance of one diode at f = 1 MHz, VR = 0 V, TA = 25°C
Leakage Current
IRM @ VRM
Typ Capacitance Typ Capacitance
@ 0 V Bias (pF) @ 3 V Bias (pF)
(Note 2)
(Note 2)
VRWM IRWM (mA) Typ Max Typ Max
3.0 1.0
13 17 7.0 11.5
4.3 1.0
12 15 6.7 9.5
9.0 0.5
6.5 10 3.5 5.0
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NUP45V6P5 Даташит, Описание, Даташиты
NUP45V6P5 Series
TYPICAL ELECTRICAL CHARACTERISTICS
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
−60 −40
−20 0 20 40 60
T, TEMPERATURE (°C)
80 100
Figure 1. Reverse Leakage versus
Temperature
14
12
10
8
6
4
2
0
0
TA = 25°C
12 V
1 2345
BIAS VOLTAGE (V)
Figure 2. Capacitance
6
100
tr
90
80
70
60
50
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tP) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
40
30
tP
20
10
0
0
20 40 60
t, TIME (ms)
80
Figure 3. 8 × 20 ms Pulse Waveform
1
0.1
0.01
0.001
0.6
TA = 25°C
0.8 1.0 1.2 1.4 1.6
VF, FORWARD VOLTAGE (V)
Figure 4. Forward Voltage
1.8
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Номер в каталогеОписаниеПроизводители
NUP45V6P5Low Capacitance Quad ArrayON Semiconductor
ON Semiconductor

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