NUS2501W6 PDF даташит
Спецификация NUS2501W6 изготовлена «ON Semiconductor» и имеет функцию, называемую «Integrated NPN Digital Transistor». |
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Детали детали
Номер произв | NUS2501W6 |
Описание | Integrated NPN Digital Transistor |
Производители | ON Semiconductor |
логотип |
6 Pages
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NUS2501W6
Integrated NPN Digital
Transistor with Switching
Diode Array
This new option of integrated devices is designed to replace a
discrete solution of a single transistor with three switching diodes.
BRT (Bias Resistor Transistor) contains a single transistor with a
monolithic bias network consisting of two resistors; a series base
resistor and a base−emitter resistor. The BRT technology eliminates
these individual components by integrating them into a single device,
therefore integration of a single BRT with three switching diodes
results in a significant reduction of both system cost and board space.
This new device is offered in the SC−88 surface mount package.
Features
• Single SC−88 Surface Mount Package
• Moisture Sensitivity Level 1
Benefits
• Integration of Six Discrete Components
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Wireless Phones
• Handheld Products
• Notebook Computers
• LCD Display Panels
MAXIMUM RATINGS (TA = 25°C unless otherwise noted.)
Rating
Symbol
Value
Collector−Base Voltage
Collector−Emitter Voltage
Collector Current
Diode Reverse Voltage
Diode Peak Reverse Voltage
Diode Forward Current
Diode Peak Forward Current
VCBO
VCEO
IC
VR
VRM
IF
IFM
50
50
100
80
80
100
300
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
mAdc
mAdc
http://onsemi.com
16
25
34
6
1
SC−88
(SOT−363)
CASE 419B
MARKING
DIAGRAM
6
LGd
1
LG = Specific Device Code
d = Date Code
ORDERING INFORMATION
Device
Package
Shipping†
NUS2501W6T1
SC−88 3000 Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2004
January, 2004 − Rev. P1
Publication Order Number:
NUS2501W6/D
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NUS2501W6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Test Conditions
Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Base Cutoff Current
ICBO
VCB = 50 V, IE = 0
− − 100 nAdc
Collector−Emitter Cutoff Current
Emitter−Base Cutoff Current
Collector−Base Breakdown Voltage
ICEO
IEBO
V(BR)CBO
VCE = 50 V, IB = 0
VEB = 6.0 V, IC = 0
IC = 10 mA, IE = 0
− − 500 nAdc
− − 0.1 mAdc
50 −
− Vdc
Collector−Emitter Breakdown Voltage (Note 1)
Diode Reverse Breakdown Voltage
Diode Reverse Voltage Leakage Current
V(BR)CEO
V(BR)
IR
IC = 2.0 mA, IB = 0
IR = 100 mA
VR = 70 V
50 −
− Vdc
80 −
− Vdc
− − 0.1 mAdc
Diode Forward Voltage
VF
IF = 100 mA
− − 1.2 Vdc
Diode Capacitance
CD
VR = 6.0 V, f = 1.0 MHz
−
− 3.5 pF
ON CHARACTERISTICS (Note 1)
DC Current Gain
Collector−Emitter Saturation Voltage
hFE
VCE = 10 V, IC = 5.0 mA 80 140
−
−
VCE(sat)
IC = 10 mA, IB = 0.3 mA
−
− 0.25 Vdc
Output Voltage(on)
VOL
VCC = 5.0 V, VB = 3.5 V,
−
RL = 1.0 kW
− 0.2 Vdc
Output Voltage(off)
VOH
VCC = 5.0 V, VB = 0.5 V,
4.9
−
RL = 1.0 kW
− Vdc
Input Resistor
Resistor Ratio
1. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2%.
R1
R1/R2
− 32.9 − 61.1 kW
−
0.8 1.0 1.2
−
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2
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10
IC/IB = 10
1
0.1
NUS2501W6
TYPICAL TRANSISTOR ELECTRICAL CHARACTERISTICS
1000
TA = −25°C
25°C
75°C
100
VCE = 10 V
TA = 75°C
25°C
−25°C
0.01
0
1
0.8
0.6
0.4
0.2
00
20 40
IC, COLLECTOR CURRENT (mA)
Figure 1. VCE(sat) versus IC
50 10 1
10
IC, COLLECTOR CURRENT (mA)
Figure 2. DC Current Gain
100
f = 1 MHz
IE = 0 V
TA = 25°C
100 25°C
75°C
10 TA = −25°C
1
0.1
10 20 30 40
VR, REVERSE BIAS VOLTAGE (VOLTS)
Figure 3. Output Capacitance
0.01
0.001
50 0
VO = 5 V
24 6
Vin, INPUT VOLTAGE (VOLTS)
8
10
Figure 4. Output Current versus Input Voltage
100
VO = 0.2 V
10
TA = −25°C
25°C
75°C
1
0.1
0
10 20 30 40
IC, COLLECTOR CURRENT (mA)
50
Figure 5. Input Voltage versus Output Current
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Номер в каталоге | Описание | Производители |
NUS2501W6 | Integrated NPN Digital Transistor | ON Semiconductor |
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