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PDF NUS3046MN Data sheet ( Hoja de datos )
| Número de pieza | NUS3046MN | |
| Descripción | Overvoltage Protection IC | |
| Fabricantes | ON Semiconductor | |
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NUS3046MN
Overvoltage Protection IC
with Integrated MOSFET
This device represents a new level of safety and integration by
combining the NCP346 overvoltage protection circuit (OVP) with a
30 V P−channel power MOSFET. This IC is specifically designed to
protect sensitive electronic circuitry from overvoltage transients and
power supply faults. During such hazardous events, the IC quickly
disconnects the input supply from the load, thus protecting the load
before any damage can occur.
The OVP IC is optimized for applications that use an external
AC−DC adapter or a car accessory charger to power a portable product
or recharge its internal batteries. It has a nominal overvoltage
threshold of 5.5 V which makes it ideal for single cell Li−Ion as well
as 3/4 cell NiCD/NiMH applications.
Features
• Overvoltage Turn−Off Time of Less Than 1.0 ms
• Accurate Voltage Threshold of 5.5 V, Nominal
• Control Input Compatible with 1.8 V Logic Levels
• −30 V Integrated P−Channel Power MOSFET
• Low RDS(on) = 66 mW @ −4.5 V
• Low Profile 3.3 x 3.3 mm DFN Package Suitable for Portable
Applications
• Maximum Solder Reflow temperature @ 260°C
• This is a Pb−Free Device
Benefits
• Provide Battery Protection
• Integrated Solution Offers Cost and Space Savings
• Integrated Solution Improves System Reliability
Applications
• Portable Computers and PDAs
• Cell Phones and Handheld Products
• Digital Cameras
http://onsemi.com
8
1
DFN8
CASE 506AL
MARKING DIAGRAM
1 3046
AYWW G
G
3046 = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
VCC 8
OUT 7
GND
10
GATE 6
SRC 5
DRAIN
9
1 IN
2 GND
3 CNTRL
4 DRAIN
(Bottom View)
ORDERING INFORMATION
Device
Package
Shipping†
NUS3046MNT1G DFN8 3000 Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
June, 2006 − Rev. 1
Publication Order Number:
NUS3046MN/D
1 page  
NUS3046MN
Normal Operation
Figure 1 illustrates a typical configuration. The external
adapter provides power to the protection system so the
circuitry is only active when the adapter is connected. The
OVP monitors the voltage from the charger and if the
voltage exceeds the overvoltage threshold, Vth, the OUT
signal drives the gate of the MOSFET to within 1.0 V of
VCC, thus turning off the FET and disconnecting the source
from the load. The nominal time it takes to drive the gate to
this state is 400 nsec (1.0 msec maximum for gate
capacitance of < 12 nF). The CNTRL input can be used to
interrupt charging and allow the microcontroller to measure
the cell voltage under a normal condition to get a more
accurate measure of the battery voltage. Once the
overvoltage is removed, the MOSFET will be turned on
again.
There are two events that will cause the OVP to turn off
the MOSFET.
• Voltage on IN Rises Above the Overvoltage Detection
Threshold
• CNTRL Input is Driven to a Logic HIGH
Adjusting the Overvoltage Detection Point with
External Resistors
The separate IN and VCC pins allow the user to adjust the
overvoltage threshold, Vth, upwards by adding a resistor
divider with the tap at the IN pin. However, the input
impedance Rin does play a significant role in the calculation
since it is several 10’s of kW (Rin = 54 kW typical). The
following equation shows the effects of Rin.
VCC + Vx(1 ) R1ń(R2ńńRin))
(eq. 1)
which equates to:
VCC + Vx(1 ) R1ńR2 ) R1ńRin)
(eq. 2)
So, as Rin approaches infinity:
VCC + Vx(1 ) R1ńR2)
(eq. 3)
This shows that Rin shifts the Vth detection point in
accordance to the ratio of R1 / Rin. However, if R1 << Rin,
this shift can be minimized. The following steps show this
procedure.
Designing around the Maximum Voltage Rating
Requirements, V(VCC, IN)
The maximum breakdown voltage between pins VCC and
IN is 15 V. Therefore, care must be taken that the design does
not exceed this voltage. Normally, the designer shorts VCC
to IN, V(VCC, IN) is shorted to 0 V, so there is no issue.
However, one must take care when adjusting the
overvoltage threshold.
In Figure 2, the R1 resistor of the voltage divider divides
the V(VCC, IN) voltage to a given voltage threshold equal to:
(VCC, IN) + VCC * (R1ń(R1 ) (R2ńń Rin))) (eq. 4)
V(VCC, IN) worst case equals 15 V, and VCC worst case
equals 30 V, therefore, one must ensure that:
R1ń(R1 ) (R2ńń Rin)) t 0.5
(eq. 5)
Where 0.5 = V(VCC, IN)max/VCCmax
Therefore, the overvoltage threshold should be adjusted to
voltage levels that are less than 15 V. If greater thresholds are
desired, ON Semiconductor offers the NCP3045 which can
withstand those voltages.
VCC
R1
IN
R2 Rin
NUS3046
GND
Figure 2. Voltage divider input to adjust overvoltage
detection point
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