NZL5V6ATT1 PDF даташит
Спецификация NZL5V6ATT1 изготовлена «ON Semiconductor» и имеет функцию, называемую «SC75 Dual Common Anode Zener». |
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Детали детали
Номер произв | NZL5V6ATT1 |
Описание | SC75 Dual Common Anode Zener |
Производители | ON Semiconductor |
логотип |
4 Pages
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NZL5V6ATT1
SC75 Dual Common Anode
Zener for ESD Protection
This dual monolithic silicon voltage suppressor is designed for
applications requiring transient overvoltage protection capability. It is
intended for use in voltage and ESD sensitive equipment such as
computers, printers, business machines, communication systems,
medical equipment, and other applications. Its dual junction common
anode design protects four separate lines using only one package.
These devices are ideal for situations where board space is at a
premium.
Specification Features
• SC−75 Package Allows Two Separate Unidirectional Configurations
• Low Leakage < 1 mA @ 3 V
• Breakdown Voltage: 5.3 − 5.9 V @ 1 mA
• Low Capacitance (40 pF typical between terminals)
• ESD Protection Meeting IEC61000−4−2
• Pb−Free Package is Available
Mechanical Characteristics
• Void Free, Transfer−Molded, Thermosetting Plastic Case
• Corrosion Resistant Finish, Easily Solderable
• Package Designed for Optimal Automated Board Assembly
• Small Package Size for High Density Applications
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3
ANODE
CATHODE
1
2
CATHODE
3
12
SC−75
CASE 463
STYLE 4
MARKING
DIAGRAM
56 M G
G
1
56 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NZL5V6ATT1
SC−75 3000/Tape & Reel
NZL5V6ATT1G
SC−75 3000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2006
May, 2006 − Rev. 3
1
Publication Order Number:
NZL5V6ATT1/D
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NZL5V6ATT1
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
UNIDIRECTIONAL (Circuit tied to Pins 1 and 3, or 2 and 3)
Symbol
Parameter
IPP
VC
VRWM
IR
VBR
IT
QVBR
IF
VF
ZZT
IZK
ZZK
Maximum Reverse Peak Pulse Current
Clamping Voltage @ IPP
Working Peak Reverse Voltage
Maximum Reverse Leakage Current @ VRWM
Breakdown Voltage @ IT
Test Current
Maximum Temperature Coefficient of VBR
Forward Current
Forward Voltage @ IF
Maximum Zener Impedance @ IZT
Reverse Current
Maximum Zener Impedance @ IZK
I
IF
VC VBR VRWM
IIRT VF
V
IPP
Uni−Directional TVS
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Value
Unit
Steady State Power − 1 Diode (Note 1)
Maximum Junction Temperature
Operating Junction and Storage Temperature Range
ESD Discharge
IEC61000−4−2, Air Discharge
IEC61000−4−2, Contact Discharge
PD
TJmax
TJ Tstg
VPP
150
150
−55 to +150
"15
"8
mW
°C
°C
kV
Lead Solder Temperature (10 seconds duration)
TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. Only 1 diode under power. For all 4 diodes under power, PD will be 25%. Mounted on FR−4 board with min pad.
ELECTRICAL CHARACTERISTICS
Breakdown Voltage
VBR @ 1 mA (V)
Leakage Current
IRM @ VRM = 3.0 V
VC @ IPP
(Note 2)
Device
Min Nom Max
(mA)
VC (V) IPP (A)
NZL5V6
5.3 5.6 5.9
1.0 9.97 6.11
2. Surge current waveform per Figure 2 and clamping voltage (VC) per Figure 6.
Typical
Capacitance
@ 0 V Bias
@ 1 MHz
(pF)
40
Max
VF @ IF = 10 mA
(V)
1.25
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NZL5V6ATT1
300
250
200
150
100
50
0
0 25 50 75 100 125 150 175
TEMPERATURE (°C)
Figure 1. Steady State Power Derating Curve
100
90 tr
80
70
60
50
40
30
20
10
0
0
tp
PEAK VALUE IRSM @ 8 ms
PULSE WIDTH (tp) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8 ms
HALF VALUE IRSM/2 @ 20 ms
20 40
t, TIME (ms)
60
80
Figure 2. 8 X 20 ms Pulse Waveform
100
10
NOTE: Non−Repetitive Surge
1
10
100
tp, PULSE WIDTH (ms)
Figure 3. Pulse Rating Curve
1000
45
40
35
30
25
20
15
10
5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
BIAS VOLTAGE (V)
Figure 4. Capacitance
1
0.1
0.01
0.001
0.6
0.7 0.8 0.9 1 1.1 1.2 1.3
VF, FORWARD VOLTAGE (V)
Figure 5. Forward Current versus
Forward Voltage
1.4
11
10
9
8
7
6
5
1.0 2.0
3.0 4.0
5.0 6.0 7.0
IPP, PEAK PULSE CURRENT (A)
Figure 6. Clamping Voltage versus Peak Pulse
Current (8 x 20 ms Pulse)
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Номер в каталоге | Описание | Производители |
NZL5V6ATT1 | SC75 Dual Common Anode Zener | ON Semiconductor |
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