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S-AU81 PDF даташит

Спецификация S-AU81 изготовлена ​​​​«Toshiba Semiconductor» и имеет функцию, называемую «RF Power Amplifier Module».

Детали детали

Номер произв S-AU81
Описание RF Power Amplifier Module
Производители Toshiba Semiconductor
логотип Toshiba Semiconductor логотип 

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S-AU81 Даташит, Описание, Даташиты
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RF Power Amplifier Module
S-AU81
Power Amplifier Modules for Domestic
cdmaOne
· GaAs HBT Micro PA (on-chip bias circuit and
matching circuit)
· Output power: Po = 27.0dBmW (min)
· Gain: Gp = 28.0dB (typ.)
· Total current: It (1) = 385 mA (typ.)
(@Pout = 27.0dBmW)
· Low-voltage operation: Operation at VCC = 1.5 V is
possible
It (2) = 97 mA (typ) (@Pout = 14dBmW, VCC = 1.5 V)
· This device features an output control pin which
can be switched between low-power and high-power
settings.
It = 90 mA (typ.) (@Pout = 14dBmW, VCC = 2.70 V)
Maximum Ratings (Ta = 25°C)
JEDEC
JEITA
TOSHIBA
Weight: 0.0 g (typ.)
Characteristics
Supply voltage 1
Supply voltage 2
Control voltage
Collector current
Power dissipation
Operating temperature
Storage temperature range
Note 1: Ta = 25°C
Symbol
Rating
VCC1
VCC2
Vcon
ICC
PD (Note 1)
Top
Tstg
5
5
4
1
2
-20~+60
-30~+125
Unit
V
V
V
A
W
°C
°C
Marking
Pin No.1
Abbreviated product no.
U81
S-AU81
Unit: mm
5-6A
Monthly lot number
1
2001-11-06









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S-AU81 Даташит, Описание, Даташиты
S-AU81
Electrical Characteristics (Tc = 25°C)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Power gain (1)
Control current
Total current (1)
Adjacent-channel power
ratio (1)
Power gain (2)
Total current (2)
Adjacent-channel power
ratio (2)
Power gain (3)
Adjacent-channel power
ratio (3)
VSWRin
Harmonics
2fo
3fo
Stability
Receiving band noise
Load mismatch
Gp (1)
Icon
It (1)
VCC1, VCC 2 = 3.6 V, Vcon = 2.85 V (Note 2),
Po = 27dBmW
f = 887~925 MHz, Pin = adjust, ZG = ZL = 50 W
ACPR1 (1)
ACPR2 (2)
VCC1, VCC 2 = 3.6 V,
Vcon = 2.85 V (Note 2),
Po = 27dBmW, f = 887~925 MHz,
ZG = ZL = 50 W (Note 3)
900 kHz
1.98 MHz
Gp (2)
It (2)
VCC1, VCC 2 = 1.5 V, Vcon = 2.85 V (Note 2),
Po = 14dBmW, f = 887~925 MHz, Pin = adjust,
ZG = ZL = 50 W
ACPR1 (2)
ACPR2 (2)
VCC1, VCC 2 = 1.5 V,
Vcon = 2.85 V (Note 2),
Po = 14dBmW, f = 887~925 MHz,
ZG = ZL = 50 W (Note 3)
900 kHz
1.98 MHz
Gp (3)
VCC1, VCC 2 = 3.6 V, Vcon = 2.85 V (Note 2),
Po = 27dBmW, f = 887~925 MHz, Pin = adjust,
ZG = ZL = 50 W), Tc = -20~+60°C
ACPR1 (3)
ACPR2 (3)
VCC1, VCC 2 = 3.6 V,
Vcon = 2.85 V (Note 2),
Po = 27dBmW, f = 887~925 MHz,
ZG = ZL = 50 W,
Tc = -20~+60°C (Note 3)
900 kHz
1.98 MHz
VSWRin
HRM (1)
HRM (2)
VCC1, VCC 2 = 3.6 V, Vcon = 2.85 V (Note 3),
Po = 27dBmW, f = 887~925 MHz, Pin = adjust,
ZG = ZL = 50 W
SPR
NRB
¾
VCC1, VCC 2 = 1.5 V, 2.5 V, 3.6 V, 4.2 V,
Vcon = 2.85 V (Note 3), Po <= 27dBmW,
f = 887~925 MHz, Pin = adjust,
ZG = 50 W, VSWR LOAD = 3:1 all phase
VCC1, VCC 2 = 3.6 V, Vcon = 2.85 V (Note 2),
Po <= 27dBmW, f = 887~925 MHz, Pin = adjust,
ZG = ZL = 50 W
VCC1, VCC 2 = 1.5 V~4.2 V,
Vcon = 2.85 V (Note 2), Po <= 27dBmW,
f = 887~925 MHz, Pin = adjust,
ZG = 50 W, VSWR LOAD = 3:1 all phase
25.0
¾
¾
¾
28.0
3
385
-50
¾
5
¾
-45
¾ -60 -56
21.0
¾
24.0
97
¾
¾
¾ -50 -45
¾ -60 -56
24.0 27.0 ¾
¾ -48 -43
¾ -58 -55
¾2
3
¾ ¾ -30
¾ ¾ -45
¾ ¾ -60
¾ -135 ¾
No degradation
dB
mA
mA
dB
dB
dB
mA
dB
dB
dB
dB
dB
¾
dB
dB
dB
dBmW/
Hz
¾
Caution: This RF power amplifier is the electrostatic sensitive device. Please handle with caution.
Note 2: Vcon = 2.85 V is set to obtain Iidle ~- 75 mA when VCC1, VCC2 = 3.6 V
Note 3:
ACPR
a) Pc (1.23 MHz) is average power measured for 1.23 MHz bandwidth with CDMA signal.
b) P (30 kHz) is average power measured for 30 kHz bandwidth with 900 kHz/1.98 MHz offset.
c) ACPR1 (or ACPR2) = P (30 kHz) - Pc (1.23 MHz) dB
Note 4: These electrical characteristics are measured using Toshiba recommended test board.
2 2001-11-06









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S-AU81 Даташит, Описание, Даташиты
Package Dimensions
S-AU81
3 2001-11-06










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