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NBB-310 PDF даташит

Спецификация NBB-310 изготовлена ​​​​«RF Micro Devices» и имеет функцию, называемую «CASCADABLE BROADBAND GaAs MMIC AMPLIFIER».

Детали детали

Номер произв NBB-310
Описание CASCADABLE BROADBAND GaAs MMIC AMPLIFIER
Производители RF Micro Devices
логотип RF Micro Devices логотип 

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NBB-310 Даташит, Описание, Даташиты
www.DataSheet4U.com
0
Typical Applications
• Narrow and Broadband Commercial and
Military Radio Designs
• Linear and Saturated Amplifiers
NBB-310
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 12GHz
• Gain Stage or Driver Amplifiers for
MWRadio/Optical Designs (PTP/PMP/
LMDS/UNII/VSAT/WLAN/Cellular/DWDM)
Product Description
The NBB-310 cascadable broadband InGaP/GaAs MMIC
amplifier is a low-cost, high-performance solution for gen-
eral purpose RF and microwave amplification needs. This
50gain block is based on a reliable HBT proprietary
MMIC design, providing unsurpassed performance for
small-signal applications. Designed with an external bias
resistor, the NBB-310 provides flexibility and stability. The
NBB-310 is packaged in a low-cost, surface-mount
ceramic package, providing ease of assembly for high-
volume tape-and-reel requirements. It is available in
either packaged or chip (NBB-310-D) form, where its gold
metallization is ideal for hybrid circuit designs.
45°
UNITS:
Inches
(mm)
0.040
(1.02)
0.070
(1.78)
0.020
0.200 sq.
(5.08)
0.055
(1.40)
0.005
(0.13)
Optimum Technology Matching® Applied
Si BJT
GaAs HBT
GaAs MESFET
Si Bi-CMOS
9InGaP/HBT
SiGe HBT
GaN HEMT
Si CMOS
SiGe Bi-CMOS
GND
4
MARKING - N6
Package Style: Micro-X, 4-Pin, Ceramic
Features
• Reliable, Low-Cost HBT Design
• 13dB Gain
• High P1dB of +15.2dBm at 6GHz
• Single Power Supply Operation
• 50I/O Matched for High Freq. Use
RF IN 1
3 RF OUT
2
GND
Functional Block Diagram
Rev A5 030912
Ordering Information
NBB-310
Cascadable Broadband GaAs MMIC Amplifier DC to
12 GHz
NBB-310-T1 or -T3Tape & Reel, 1000 or 3000 Pieces (respectively)
NBB-310-D
NBB-310 Chip Form (100 pieces minimum order)
NBB-310-E
Fully Assembled Evaluation Board
NBB-X-K1
Extended Frequency InGaP Amp Designer’s Tool Kit
RF Micro Devices, Inc.
Tel (336) 664 1233
7628 Thorndike Road
Fax (336) 664 0454
Greensboro, NC 27409, USA
http://www.rfmd.com
4-17









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NBB-310 Даташит, Описание, Даташиты
NBB-310
Absolute Maximum Ratings
Parameter
Rating
Unit
RF Input Power
+20 dBm
Power Dissipation
350 mW
Device Current
70 mA
Channel Temperature
200 °C
Operating Temperature
-45 to +85
°C
Storage Temperature
-65 to +150
°C
Exceeding any one or a combination of these limits may cause permanent damage.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Parameter
Overall
Small Signal Power Gain, S21
Gain Flatness, GF
Input and Output VSWR
Bandwidth, BW
Output Power @
-1dB Compression, P1dB
Noise Figure, NF
Third Order Intercept, IP3
Reverse Isolation, S12
Device Voltage, VD
Gain Temperature Coefficient,
δGT/δT
MTTF versus Temperature
@ ICC=50mA
Case Temperature
Junction Temperature
MTTF
Thermal Resistance
θJC
Specification
Min.
Typ.
Max.
12.5 13.0
12.0 12.5
11.0 11.5
9.0 10.0
±0.6
1.4:1
1.75:1
2.0:1
12.0
13.8
15.2
14.5
12.0
4.9
+24.0
-17
4.6 5.0
-0.0015
5.3
85
139
>1,000,000
216
Unit
dB
dB
dB
dB
dB
GHz
dBm
dBm
dBm
dBm
dB
dBm
dB
V
dB/°C
Condition
VD=+5V, ICC=50mA, Z0=50, TA=+25°C
f=0.1GHz to 1.0GHz
f=1.0GHz to 4.0GHz
f=4.0GHz to 8.0GHz
f=8.0GHz to 12.0GHz
f=0.1GHz to 8.0GHz
f=0.1GHz to 7.0GHz
f=7.0GHz to 10.0GHz
f=10.0GHz to 12.0GHz
BW3 (3dB)
f = 2.0 GHz
f = 6.0 GHz
f = 8.0 GHz
f = 12.0 GHz
f = 3.0 GHz
f = 2.0 GHz
f=0.1GHz to 12.0GHz
°C
°C
hours
°C/W
J---T-V----–D----T----CI--C-A--C-S---E- = θJCC Watt)
4-18
Rev A5 030912









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NBB-310 Даташит, Описание, Даташиты
NBB-310
Pin Function Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
3 RF OUT RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to VCC. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
R = (---V----C---C-----–---I-V-C---D-C---E---V---I--C----E----)
RF IN
RF OUT
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds maximum datasheet operating cur-
rent over the planned operating temperature. This means that a resistor
between the supply and this pin is always required, even if a supply
near 8.0V is available, to provide DC feedback to prevent thermal run-
away. Because DC is present on this pin, a DC blocking capacitor, suit-
able for the frequency of operation, should be used in most
applications. The supply side of the bias network should also be well
bypassed.
4
GND
Same as pin 2.
Rev A5 030912
4-19










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