|
|
PDF NTTD1P02R2 Data sheet ( Hoja de datos )
| Número de pieza | NTTD1P02R2 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de NTTD1P02R2 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
|
No Preview Available !
www.DataSheet4U.com
NTTD1P02R2
Power MOSFET
−1.45 Amps, −20 Volts
P−Channel Enhancement Mode
Dual Micro8 Package
Features
• Ultra Low RDS(on)
• Higher Efficiency Extending Battery Life
• Logic Level Gate Drive
• Miniature Dual Micro8 Surface Mount Package
• Diode Exhibits High Speed, Soft Recovery
• Micro8 Mounting Information Provided
Applications
• Power Management in Portable and Battery−Powered Products, i.e.:
Computers, Printers, PCMCIA Cards, Cellular and Cordless
Telephones
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Thermal Resistance −
Junction−to−Ambient (Note 1.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
Thermal Resistance −
Junction−to−Ambient (Note 2.)
Total Power Dissipation @ TA = 25°C
Continuous Drain Current @ TA = 25°C
Continuous Drain Current @ TA = 70°C
Pulsed Drain Current (Note 3.)
Operating and Storage
Temperature Range
VDSS
VGS
RθJA
PD
ID
ID
IDM
RθJA
PD
ID
ID
IDM
TJ, Tstg
−20
"8.0
V
V
250
0.50
−1.45
−1.15
−10
°C/W
W
A
A
A
125
1.0
−2.04
−1.64
−16
−55 to
+150
°C/W
W
A
A
A
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = −20 Vdc, VGS = −4.5 Vdc,
Peak IL = −3.5 Apk, L = 5.6 mH,
RG = 25 Ω)
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
EAS
TL
35 mJ
260 °C
1. Minimum FR−4 or G−10 PCB, Steady State.
2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single
sided), Steady State.
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
http://onsemi.com
−1.45 AMPERES
−20 VOLTS
160 mW @ VGS = −4.5
Dual P−Channel
D
G
S
8
1
Micro8
CASE 846A
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
Source 1
Gate 1
Source 2
Gate 2
18
2
3
4
YWW
BC
7
6
5
Drain 1
Drain 1
Drain 2
Drain 2
(Top View)
Y = Year
WW = Work Week
BC = Device Code
ORDERING INFORMATION
Device
Package
Shipping†
NTTD1P02R2 Micro8 4000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2003
December, 2003 − Rev. 1
1
Publication Order Number:
NTTD1P02R2/D
1 page  
NTTD1P02R2
TYPICAL ELECTRICAL CHARACTERISTICS
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
SINGLE PULSE
0.1
1.0E−05 1.0E−04
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RθJC(t) = r(t) RθJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RθJC(t)
1.0E−03
1.0E−02
1.0E−01
t, TIME (s)
1.0E+00
Figure 13. Thermal Response
1.0E+01 1.0E+02 1.0E+03
http://onsemi.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet NTTD1P02R2.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| NTTD1P02R2 | Power MOSFET ( Transistor ) | ON Semiconductor |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |