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Número de pieza | SBW13009 | |
Descripción | High Voltage Fast-Switching NPN Power Transistor | |
Fabricantes | SemiWell Semiconductor | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de SBW13009 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
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SemiWell Semiconductor
SBW13009
High Voltage Fast-Switching NPN Power Transistor
Features
- Very High Switching Speed (Typical [email protected])
- Minimum Lot-to-Lot hFE Variation
- Low VCE(sat) (Typical [email protected]/1.6A)
- Wide Reverse Bias S.O.A
General Description
This device is designed for high voltage, high speed switching char-
acteristic required such as switching mode power supply.
Symbol
1.Base ○
○ 2.Collector
○ 3.Emitter
TO-247
Absolute Maximum Ratings
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
PC
TSTG
TJ
Parameter
Collector-Emitter Voltage ( VBE = 0 )
Collector-Emitter Voltage ( IB = 0 )
Emitter-Base Voltage ( IC = 0 )
Collector Current
Collector Peak Current ( tP < 10 ms )
Base Current
Base Peak Current ( tP < 10 ms )
Total Dissipation at TC = 25 °C
Storage Temperature
Max. Operating Junction Temperature
Thermal Characteristics
Symbol
RθJC
RθJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1
2
3
Value
700
400
9.0
12
25
6.0
12
130
- 65 ~ 150
150
Value
0.96
40
Oct, 2002. Rev. 2
Copyright@SemiWell Semiconductor Co., Ltd., All rights reserved
Units
V
V
V
A
A
A
A
W
°C
°C
Units
°C/W
°C/W
1/6
1 page Inductive Load Switching & RBSOA Test Circuit
SBW13009
IB1
VBE(off)
IC
IB
RBB
LC
f
VCE
D.U.T
VClamp
VCC
Resistive Load Switching Test Circuit
RC
IB1
VBE(off)
IC
IB
RBB
VCE
D.U.T
VCC
5/6
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet SBW13009.PDF ] |
Número de pieza | Descripción | Fabricantes |
SBW13009 | High Voltage Fast-Switching NPN Power Transistor | SemiWell Semiconductor |
SBW13009-0 | High voltage Fast Switching NPN Power Transistor | WINSEMI SEMICONDUCTOR |
SBW13009-S | High voltage Fast Switching NPN Power Transistor | WINSEMI SEMICONDUCTOR |
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