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PDF HMC564 Data sheet ( Hoja de datos )
| Número de pieza | HMC564 | |
| Descripción | GaAs PHEMT MMIC LOW NOISE AMPLIFIER | |
| Fabricantes | Hittite Microwave | |
| Logotipo |  |
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v00.0206
1
Typical Applications
The HMC564 is ideal for use as a LNA or driver ampli-
fier for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
• Test Equipment and Sensors
• Military & Space
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Features
Noise Figure: 1.8 dB
Gain: 17 dB
OIP3: 24 dBm
Single Supply: +3V @ 51 mA
50 Ohm Matched Input/Output
Small Size: 1.96 x 0.98 x 0.10 mm
Functional Diagram
General Description
The HMC564 is a high dynamic range GaAs PHEMT
MMIC Low Noise Amplifier (LNA) chip which operates
from 7 to 13.5 GHz. The HMC564 features extremely
flat performance characteristics including 17 dB of
small signal gain, 1.8 dB of noise figure and output
IP3 of 24 dBm across the operating band. This self-
biased LNA is ideal for hybrid and MCM assemblies
due to its compact size, consitant output power, single
+3V supply operation, and DC blocked RF I/O’s.
All data is measured with the chip in a 50 Ohm test
fixture connected via two 0.025 mm (1 mil) diameter
bondwires of minimal length 0.31 mm (12 mil).
Electrical Specifications, TA = +25° C, Vdd 1, 2 = +3V
Parameter
Frequency Range
Gain
Gain Variation Over Temperature
Noise Figure
Input Return Loss
Output Return Loss
Output Power for 1 dB Compression (P1dB)
Saturated Output Power (Psat)
Output Third Order Intercept (IP3)
Supply Current (Idd)(Vdd = +3V)
Min.
14
9
Typ.
7 - 13.5
17
0.02
1.8
15
16
12
14.5
24
51
Max.
0.03
2.2
Units
GHz
dB
dB/ °C
dB
dB
dB
dBm
dBm
dBm
mA
1 - 204
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
1 page  
1
Pad Descriptions
Pad Number
Function
1 IN
v00.0206
HMC564
GaAs PHEMT MMIC LOW NOISE
AMPLIFIER, 7 - 13.5 GHz
Description
This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
Interface Schematic
2, 3
Vdd1, 2
Power Supply Voltage for the amplifier. External bypass
capacitors of 100 pF and 0.1 μF are required.
4
Die Bottom
OUT
GND
This pad is AC coupled and matched to
50 Ohms from 7 - 13.5 GHz.
Die Bottom must be connected to RF/DC ground.
Assembly Diagram
1 - 208
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HMC564.PDF ] | |
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