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NTB52N10 PDF даташит

Спецификация NTB52N10 изготовлена ​​​​«ON Semiconductor» и имеет функцию, называемую «N-Channel Enhancement-Mode D2PAK».

Детали детали

Номер произв NTB52N10
Описание N-Channel Enhancement-Mode D2PAK
Производители ON Semiconductor
логотип ON Semiconductor логотип 

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NTB52N10 Даташит, Описание, Даташиты
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NTB52N10
Power MOSFET
52 Amps, 100 Volts
N−Channel Enhancement−Mode D2PAK
Features
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Fast Recovery Diode
Avalanche Energy Specified
IDSS and RDS(on) Specified at Elevated Temperature
Mounting Information Provided for the D2PAK Package
Pb−Free Packages are Available
Typical Applications
PWM Motor Controls
Power Supplies
Converters
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value
Unit
Drain−to−Source Voltage
Drain−to−Source Voltage (RGS = 1.0 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Pulsed (Note 1)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 2)
VDSS
VDGR
VGS
VGSM
ID
ID
IDM
PD
100
100
"20
"40
52
40
156
178
1.43
2.0
Vdc
Vdc
Vdc
Adc
W
W/°C
W
Operating and Storage Temperature Range
TJ, Tstg −55 to
+150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 10 Vdc,
IL(pk) = 40 A, L = 1.0 mH, RG = 25 W)
EAS 800 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 2)
RqJC
RqJA
RqJA
°C/W
0.7
62.5
50
Maximum Lead Temperature for Soldering
Purposes, 1/8in from case for 10 seconds
TL 260 °C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu. Area 0.412 in2).
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 3
1
http://onsemi.com
VDSS
100 V
RDS(ON) TYP
30 mW @ 10 V
ID MAX
52 A
N−Channel
D
G
4
12
3
D2PAK
CASE 418B
STYLE 2
S
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
NTB
52N10G
AYWW
12 3
Gate Drain Source
NTB52N10
A
Y
WW
G
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
Device
NTB52N10
NTB52N10G
Package
D2PAK
D2PAK
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
NTB52N10T4
NTB52N10T4G
D2PAK
D2PAK
(Pb−Free)
800 / Tape & Reel
800 / Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NTB52N10/D









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NTB52N10 Даташит, Описание, Даташиты
NTB52N10
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Zero Gate Voltage Drain Current
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 25°C)
(VGS = 0 Vdc, VDS = 100 Vdc, TJ = 125°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS
Gate Threshold Voltage
VDS = VGS, ID = 250 mAdc)
Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
Static Drain−to−Source On−State Resistance
(VGS = 10 Vdc, ID = 26 Adc)
(VGS = 10 Vdc, ID = 26 Adc, TJ = 125°C)
Drain−to−Source On−Voltage
(VGS = 10 Vdc, ID = 52 Adc)
Forward Transconductance (VDS = 26 Vdc, ID = 10 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Notes 3 & 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 80 Vdc, ID = 52 Adc,
VGS = 10 Vdc,
RG = 9.1 W)
Total Gate Charge
Gate−to−Source Charge
Gate−to−Drain Charge
(VDS = 80 Vdc, ID = 52 Adc,
VGS = 10 Vdc)
BODY−DRAIN DIODE RATINGS (Note 3)
Diode Forward On−Voltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 37 Adc, VGS = 0 Vdc, TJ = 125°C)
Reverse Recovery Time
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms)
Reverse Recovery Stored Charge
3. Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%.
4. Switching characteristics are independent of operating junction temperature.
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qtot
Qgs
Qgd
VSD
trr
ta
tb
QRR
Min Typ Max Unit
100 −
− 160
Vdc
− mV/°C
mAdc
− − 5.0
− − 50
− − ± 100 nAdc
Vdc
2.0 2.92 4.0
− −8.75 − mV/°C
W
− 0.023 0.030
− 0.050 0.060
Vdc
− 1.25 1.45
− 31 − mhos
− 2250 3150 pF
− 620 860
− 135 265
− 15 25 ns
− 95 180
− 74 150
− 100 190
− 72 135 nC
− 13 −
− 37 −
− 1.06 1.5 Vdc
− 0.95 −
− 148 −
ns
− 106 −
− 42 −
− 0.66 −
mC
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NTB52N10 Даташит, Описание, Даташиты
NTB52N10
100
VGS = 10 V
90
9V
80
8V
70
7V
TJ = 25°C
6V
60 5.5 V
50
40
30 5 V
20
4.5 V
10
4V
0 0 1 2 3 4 5 6 7 8 9 10
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
100
90 VDS 10 V
80
70
60
50
40
30
20
10
0
2
TJ = 100°C
TJ = 25°C
TJ = −55°C
3 456 7
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.05
0.04
VGS = 10 V
TJ = 100°C
0.05
0.04
TJ = 25°C
0.03
0.02
0.01
TJ = 25°C
TJ = −55°C
0
10 20
30 40 50 60 70 80
ID, DRAIN CURRENT (AMPS)
90 100
Figure 3. On−Resistance versus Drain Current
and Temperature
0.03
0.02
VGS = 10 V
VGS = 15 V
0.01
0
0 10 20 30 40 50 60 70 80 90 100
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2.5
2.25
2.0
1.75
1.5
ID = 26 A
VGS = 10 V
10,000
VGS = 0 V
1000
TJ = 150°C
1.25
1.0
0.75
100 TJ = 100°C
0.5
0.25
0
−60
−30 0 30 60 90 120
TJ, JUNCTION TEMPERATURE (°C)
150
10
30
40 50 60 70 80 90 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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Номер в каталогеОписаниеПроизводители
NTB52N10N-Channel Enhancement-Mode D2PAKON Semiconductor
ON Semiconductor

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