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PDF NTD60N03 Data sheet ( Hoja de datos )
| Número de pieza | NTD60N03 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | ON Semiconductor | |
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NTD60N03
Power MOSFET
60 Amps, 28 Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous
Drain Current - Continuous @ TA = 25°C
Drain Current - Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C
Operating and Storage
Temperature Range
VDSS
VGS
ID
IDM
PD
TJ, Tstg
28
±20
60*
120
75
- 55 to
150
Vdc
Vdc
Adc
Watts
°C
Single Pulse Drain-to-Source Avalanche
Energy - Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc,
IL = 17 Apk, L = 5.0 mH, RG = 25 W)
Thermal Resistance
- Junction-to-Case
- Junction-to-Ambient (Note 1)
- Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
733 mJ
°C/W
1.65
67
120
260 °C
1. When surface mounted to an FR4 board using 1″ pad size,
(Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
http://onsemi.com
60 AMPERES
28 VOLTS
RDS(on) = 6.1 mW (Typ.)
N-Channel
D
G
4S
4
12
3
CASE 369A
DPAK
(Bend Lead)
STYLE 2
1 23
CASE 369
DPAK
(Straight Lead)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
YWW
T
4228
4
Drain
YWW
T
4228
12
Gate Drain
Y
WW
T
4228
3
Source
1
Gate
= Year
= Work Week
= MOSFET
= Device Code
3
2 Source
Drain
ORDERING INFORMATION
Device
Package
Shipping
NTD60N03
DPAK
75 Units/Rail
NTD60N03T4
DPAK
2500 Tape & Reel
NTD60N03-1
DPAK
Straight Lead
75 Units/Rail
© Semiconductor Components Industries, LLC, 2003
March, 2003 - Rev. 5
1
Publication Order Number:
NTD60N03/D
1 page  
NTD60N03
100
100 ms
VGS = 10 V
10 SINGLE PULSE
TC = 25°C
1 ms
10 ms
RDS(on) LIMIT
THERMAL LIMIT
dc
PACKAGE LIMIT
1
0.1 1
10 100
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
IS
tp
di/dt
trr
ta tb
0.25 IS
IS
TIME
Figure 12. Diode Reverse Recovery Waveform
1000
DUTY CYCLE
100 D = 0.5
0.2
10 0.1
0.05
0.02
1 0.01
0.1
SINGLE PULSE
0.01
1E−05
1E−04
MOUNTED TO MINIMUM RECOMMENDED FOOTPRINT
P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
RqJA(t) = r(t) RqJA
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TA = P(pk) RqJA(t)
1E−03
1E−02
1E−01
t, TIME (seconds)
1E+00
1E+01
1E+02
1E+03
Figure 13. Thermal Response - Various Duty Cycles
http://onsemi.com
5
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet NTD60N03.PDF ] | |
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