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PDF HAT2114RJ Data sheet ( Hoja de datos )
| Número de pieza | HAT2114RJ | |
| Descripción | Silicon N Channel Power MOS FET High Speed Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT2114R, HAT2114RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4.5V gate drive
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
REJ03G0120-0100Z
(Previous ADE-208-1544(Z))
Rev.1.00
Oct.06.2003
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
Rev.1.00, Oct.06.2003, page 1 of 9
1 page  
HAT2114R, HAT2114RJ
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
0.3
Pulse Test
0.2
ID = 5 A
0.1
2A
1A
0
5 10 15 20
Gate to Source Voltage VGS (V)
Static Drain to Source on State Resistance
vs. Drain Current
1.0
Pulse Test
0.5
0.2
0.1
0.05 VGS = 4.5 V
0.02
0.01
1
10 V
3 10 30
Drain Current ID (A)
100
Static Drain to Source on State Resistance
vs. Temperature
0.10
Pulse Test
0.08 1, 2 ,5A
0.06
VGS = 4.5 V
0.04
1, 2, 5 A
0.02
10 V
0
-40 0 40 80 120 160
Case Temperature Tc (°C)
Forward Transfer Admittance vs.
Drain Current
50
20
10 Tc = -25°C
5
25°C
75°C
2
1
0.5
0.1
VDS = 10 V
Pulse Test
0.3 1 3 10 30 100
Drain Current ID (A)
Rev.1.00, Oct.06.2003, page 5 of 9
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet HAT2114RJ.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| HAT2114R | Silicon N Channel Power MOS FET High Speed Power Switching | Renesas Technology |
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