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PDF HAT2240C Data sheet ( Hoja de datos )
| Número de pieza | HAT2240C | |
| Descripción | Silicon N Channel MOS FET Power Switching | |
| Fabricantes | Renesas Technology | |
| Logotipo |  |
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HAT2240C
Silicon N Channel MOS FET
Power Switching
Features
• Low on-resistance
RDS(on) = 75 mΩ typ.(at VGS = 4.5 V)
• Low drive current
• High density mounting
• 2.5 V gate drive device
Outline
RENESAS Package code: PWSF0006JA-A
(Package name: CMFPAK-6)
Indexband
6
5
4
3
2
1
REJ03G1241-0400
Rev.4.00
Apr 05, 2006
2 34 5
DDD D
6
G
S
1
1. Source
2. Drain
3. Drain
4. Drain
5. Drain
6. Gate
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current
Drain peak current
ID
ID
Note1
(pulse)
Body - drain diode reverse drain current
Channel dissipation
IDR
Pch Note2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm)
Ratings
60
±12
2.5
10
2.5
900
150
–55 to +150
(Ta = 25°C)
Unit
V
V
A
A
A
mW
°C
°C
Rev.4.00 Apr 05, 2006 page 1 of 6
1 page  
HAT2240C
Switching Time Test Circuit
Vin Monitor
4.7
Vin
4.5 V
D.U.T.
Vout
Monitor
RL
VDD
= 10 V
Waveform
90%
Vin
Vout
10%
10%
10%
td(on)
90%
tr
90%
td(off)
tf
Rev.4.00 Apr 05, 2006 page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet HAT2240C.PDF ] | |
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