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SE3470 PDF даташит

Спецификация SE3470 изготовлена ​​​​«Honeywell» и имеет функцию, называемую «AlGaAs Infrared Emitting Diode».

Детали детали

Номер произв SE3470
Описание AlGaAs Infrared Emitting Diode
Производители Honeywell
логотип Honeywell логотип 

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SE3470 Даташит, Описание, Даташиты
www.DataSheet4U.com
SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES
TO-46 metal can package
Choice of flat window or lensed package
90¡ or 20¡ (nominal) beam angle option
880 nm wavelength
Higher output power than GaAs at equivalent
drive currents
Wide operating temperature range
(- 55¡C to +125¡C)
Ideal for high pulsed current applications
Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
h Honeywell reserves the right to make
32 changes in order to improve design and
supply the best products possible.









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SE3470 Даташит, Описание, Даташиты
SE3470/5470
AlGaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3A
(1µs pulse width, 300 pps)
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
33









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SE3470 Даташит, Описание, Даташиты
SE3470/5470
AlGaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement (SE3470)
gra_017.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Angular displacement - degrees
Fig. 3 Radiant Intensity vs
Forward Current
250
Pulsed
200
gra_018.ds4
150
100
50
0.0
0
100 200 300 400
Forward current - mA
500
Fig. 5 Forward Voltage vs
Temperature
1.70
1.65
1.60
1.55
1.50
1.45
I
1.40
1.35
1.30
-50 -25 0 25 50 75
Temperature - C
gra_025.ds4
100 125
Fig. 2 Radiant Intensity vs
Angular Displacement (SE5470)
gra_023.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Angular displacement - degrees
Fig. 4 Forward Voltage vs
Forward Current
1.6
gra_026.ds4
1.5
1.4
1.3
1.2
1.1
1.0
0
20 40 60 80
Forward current - mA
100
Fig. 6 Coupling Characteristics
SE3470 with SD3443
1.0
gra_021.ds4
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Window-to-window distance - inches
h Honeywell reserves the right to make
34 changes in order to improve design and
supply the best products possible.










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Номер в каталогеОписаниеПроизводители
SE3470AlGaAs Infrared Emitting DiodeHoneywell
Honeywell

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