SE3470 PDF даташит
Спецификация SE3470 изготовлена «Honeywell» и имеет функцию, называемую «AlGaAs Infrared Emitting Diode». |
|
Детали детали
Номер произв | SE3470 |
Описание | AlGaAs Infrared Emitting Diode |
Производители | Honeywell |
логотип |
4 Pages
No Preview Available ! |
www.DataSheet4U.com
SE3470/5470
AlGaAs Infrared Emitting Diode
FEATURES
• TO-46 metal can package
• Choice of flat window or lensed package
• 90¡ or 20¡ (nominal) beam angle option
• 880 nm wavelength
• Higher output power than GaAs at equivalent
drive currents
• Wide operating temperature range
(- 55¡C to +125¡C)
• Ideal for high pulsed current applications
• Mechanically and spectrally matched to
SD3421/5421 photodiode,
SD3443/5443/5491phototransistor,
SD3410/5410 photodarlington and SD5600
series Schmitt trigger
DESCRIPTION
The SE3470/5470 series consists of aluminum gallium
arsenide infrared emitting diode mounted in a TO-46
metal can package. The SE3470 series has flat window
cans providing a wide beam angle, while the SE5470
series has glass lensed cans providing a narrow beam
angle. These devices typically exhibit 70% greater
power output than gallium arsenide devices at the same
forward current. The TO-46 packages offer high power
dissipation capability and are ideally suited for operation
in hostile environments.
INFRA-83.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
SE3470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.015
(0.36)
.153 (3.89)
.140 (3.56)
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
DIM_005a.ds4
SE5470
.219 (5.56) DIA.
.208 (5.28)
.188 (4.77) DIA.
.178 (4.52)
.500
(12.70)
MIN.
45°
.046(1.17)
.036(.91)
.100(2.54)DIA
1 NOM
.160 (4.06) DIA.
.137 (3.48)
.247 (6.27)
.224 (5.89)
DIM_005b.ds4
.015
(0.36)
.200
5.08
.048(1.22)
.028(.71)
2
.018
DIA.
(.460)
LEADS:
1. CATHODE (TAB)
2. ANODE (CASE)
h Honeywell reserves the right to make
32 changes in order to improve design and
supply the best products possible.
No Preview Available ! |
SE3470/5470
AlGaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
100 mA
Peak Forward Current
3A
(1µs pulse width, 300 pps)
Power Dissipation
150 mW [À]
Operating Temperature Range
-55¡C to 125¡C
Storage Temperature Range
-65¡C to 150¡C
Soldering Temperature (10 sec)
260¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
1.43 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
33
No Preview Available ! |
SE3470/5470
AlGaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement (SE3470)
gra_017.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Angular displacement - degrees
Fig. 3 Radiant Intensity vs
Forward Current
250
Pulsed
200
gra_018.ds4
150
100
50
0.0
0
100 200 300 400
Forward current - mA
500
Fig. 5 Forward Voltage vs
Temperature
1.70
1.65
1.60
1.55
1.50
1.45
I
1.40
1.35
1.30
-50 -25 0 25 50 75
Temperature - C
gra_025.ds4
100 125
Fig. 2 Radiant Intensity vs
Angular Displacement (SE5470)
gra_023.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-40 -30 -20 -10 0 +10 +20 +30 +40
Angular displacement - degrees
Fig. 4 Forward Voltage vs
Forward Current
1.6
gra_026.ds4
1.5
1.4
1.3
1.2
1.1
1.0
0
20 40 60 80
Forward current - mA
100
Fig. 6 Coupling Characteristics
SE3470 with SD3443
1.0
gra_021.ds4
0.8
0.6
0.4
0.2
0.0
0.0 0.2 0.4 0.6 0.8 1.0
Window-to-window distance - inches
h Honeywell reserves the right to make
34 changes in order to improve design and
supply the best products possible.
Скачать PDF:
[ SE3470.PDF Даташит ]
Номер в каталоге | Описание | Производители |
SE3470 | AlGaAs Infrared Emitting Diode | Honeywell |
Номер в каталоге | Описание | Производители |
TL431 | 100 мА, регулируемый прецизионный шунтирующий регулятор |
Unisonic Technologies |
IRF840 | 8 А, 500 В, N-канальный МОП-транзистор |
Vishay |
LM317 | Линейный стабилизатор напряжения, 1,5 А |
STMicroelectronics |
DataSheet26.com | 2020 | Контакты | Поиск |