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PDF HFA60MB60C Data sheet ( Hoja de datos )

Número de pieza HFA60MB60C
Descripción Soft Recovery Diode
Fabricantes International Rectifier 
Logotipo International Rectifier Logotipo



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HEXFREDTM
Features
• Reduced RFI and EMI
• Reduced Snubbing
• Extensive Characterization of
Recovery Parameters
PD -2.462 rev. A 03/99
HFA60MB60C
Ultrafast, Soft Recovery Diode
(ISOLATED BASE)
(1-3) (4-6) (7-9)
ANODE COMMON ANODE
1 CATHODE
2
VR = 600V
VF(typ.)ƒ = 1.1V
IF(AV) = 60A
Qrr (typ.) = 200nC
IRRM(typ.) = 6A
trr(typ.) = 30ns
di(rec)M/dt (typ.)ƒ = 170A/µs
Description
HEXFREDTM diodes are optimized to reduce losses and EMI/RFI in high frequency
power conditioning systems. An extensive characterization of the recovery
behavior for different values of current, temperature and di/dt simplifies the
calculations of losses in the operating conditions. The softness of the recovery
eliminates the need for a snubber in most applications. These devices are
ideally suited for power converters, motors drives and other applications where
switching losses are significant portion of the total losses.
Absolute Maximum Ratings (per Leg)
D-60
A
(MODIFIED T0-249AA)
VR
IF @ TC = 25°C
IF @ TC = 100°C
IFSM
EAS
PD @ TC = 25°C
PD @ TC = 100°C
TJ
TSTG
Parameter
Cathode-to-Anode Voltage
Continuous Forward Current
Continuous Forward Current
Single Pulse Forward Current 
Non-Repetitive Avalanche Energy ‚
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Max.
600
50
24
200
220
125
50
-55 to +150
300 (0.063 in. (1.6mm) from case)
Units
V
A
µJ
W
°C
Thermal - Mechanical Characteristics
RθJC
RθCS
Wt
Parameter
Junction-to-Case, Single Leg Conducting
Junction-to-Case, Both Legs Conducting
Case-to-Sink, Flat, Greased Surface
Weight
Mounting Torque
Note:  Limited by junction temperature
‚ L = 100µH, duty cycle limited by max TJ
ƒ 125°C
Min.
––––
––––
––––
––––
35 (4.0)
Typ.
––––
––––
0.10
58 (2.0)
––––
Max.
1.0
0.50
––––
––––
50 (5.7)
Units
°C/W
K/W
g (oz)
lbf•in
(N•m)
1

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HFA60MB60C pdf
HFA60MB60C
PD-2.462 rev. A 03/99
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2
I RRM
4
Qrr
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SW ITCH
FR EE-W HEEL
DIODE
+
Vd = 50V
I L(PK)
V (AV AL)
V R(RA TED)
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
WORLDHEADQUARTERS: 233 Kansas St., El Segundo, California 90245 U.S.A. Tel: (310) 322 3331. Fax: (310) 322 3332.
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, U.K. Tel: ++ 44 1883 732020. Fax: ++ 44 1883 733408.
IRCANADA: 15 Lincoln Court, Brampton, Markham, Ontario L6T3Z2. Tel: (905) 453 2200. Fax: (905) 475 8801.
IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg. Tel: ++ 49 6172 96590. Fax: ++ 49 6172 965933.
IRITALY: Via Liguria 49, 10071 Borgaro, Torino. Tel: ++ 39 11 4510111. Fax: ++ 39 11 4510220.
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo, Japan 171. Tel: 81 3 3983 0086.
IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower,13-11, Singapore 237994. Tel: ++ 65 838 4630.
IR TAIWAN: 16 Fl. Suite D.207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan. Tel: 886 2 2377 9936.
http://www.irf.com
Fax-On-Demand: +44 1883 733420
Data and specifications subject to change without notice.
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