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OP580 PDF даташит

Спецификация OP580 изготовлена ​​​​«OPTEK Technologies» и имеет функцию, называемую «Silicon Phototransistor».

Детали детали

Номер произв OP580
Описание Silicon Phototransistor
Производители OPTEK Technologies
логотип OPTEK Technologies логотип 

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OP580 Даташит, Описание, Даташиты
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Silicon Phototransistor in SMT
Plastic Package
OP580
Wide Acceptance Angle
Fast Response Time
Plastic Leadless Chip Carrier (PLCC)
The OP580 is an NPN silicon phototransistor mounted in a miniature SMT package. The device has a flat window
lens which enables a wide acceptance angle. This device is packaged in a plastic leadless chip carrier that is
compatible with most automated mounting equipment. The OP580 is mechanically and spectrally matched to the
OP280 infrared LED.
Applications
Non-Contact Position Sensing
Datum detection
Machine automation
Optical encoders
Relative Response vs. Wavelength
100%
80%
60%
40%
20%
0%
400 500 600 700 800 900 1000 1100
Wavelength (nm)
OP580
Optek reserves the right to make changes at any time in order to improve design and to supply the best product possible.
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com
Pb
RoHS
A subsidiary of
TT electronics plc









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OP580 Даташит, Описание, Даташиты
SMT Silicon Phototransistor
OP580
Absolute Maximum Ratings
TA = 25o C unless otherwise noted
Storage Temperature Range
Operating Temperature Range
Lead Soldering Temperature
Collector-Emitter Voltage
Emitter-Collector Voltage
Collector Current
Power Dissipation
Notes:
1. Solder time less than 5 seconds at temperature extreme.
2. De-rate linearly at 2.17 mW/° C above 25° C.
-40° C to +85° C
-25° C to +85° C
260° C(1)
30 V
5V
20 mA
75 mW(2)
Electrical Characteristics (TA = 25°C unless otherwise noted)
SYMBOL
PARAMETER
MIN TYP MAX UNITS
CONDITIONS
IC(ON)
VCE(SAT)
ICEO
V(BR)CEO
V(BR)ECO
tr, tf
On-State Collector Current
Collector-Emitter Saturation Voltage
1.0
mA VCE = 5.0V, Ee = 5.0mW/cm2 (3)
0.4 V IC = 100µA, Ee = 2.0mW/cm2 (3)
Collector-Emitter Dark Current
100 nA VCE = 5.0V, Ee = 0 (4)
Collector-Emitter Breakdown Voltage
30
V IC = 100µA
Emitter-Collector Breakdown Voltage
5
Rise and Fall Times
15
V IE = 100µA
µs IC = 1mA, RL = 1K
3. Light source is an unfiltered GaAs LED with a peak emission wavelength of 935nm and a radiometric intensity level which varies less than
10% over the entire lens surface of the phototransistor being tested.
4.
To
Calculate
typical
collector
dark
current
in
µA,
use
the
formula
ICEO
=
10(0.04
T -3/4)
A
where TA is the ambient temperature in ° C.
Relative On-State Collector
Current vs. Irradiance
160%
Normalized at Ee = 5mW/cm2
Conditions: VCE = 5V,
140% λ = 935nm, TA = 25 °C
120%
100%
80%
60%
40%
20%
Relative On-State Collector Current
vs. Temperature
140%
130%
Normalized at TA = 25°C .
Conditions: VCE = 5V,
λ = 935nm, TA = 25 °C
80°C
120%
110%
100%
90%
80%
-40°C
70%
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0
Ee—Irradiance (mW/cm2)
-25
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com
0 25 50 75
Temperature—(°C)
100
Issue 1.1 07.05
Page 2 of 4









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OP580 Даташит, Описание, Даташиты
SMT Silicon Phototransistor
OP580
100%
80%
Relative Response vs.
Angular Position
60%
40%
20%
0%
-90
-60 -30
0
30 60
Angular Position (Degrees)
90
Relative On-State Collector Current
vs. Collector-Emitter Voltage
1.40
1.20
1.00
0.80
0.60
0.40
6 mW/cm2
5 mW/cm2
4 mW/cm2
3 mW/cm2
2 mW/cm2
0.20
1 mW/cm2
0 0.1 0.2 0.3 0.4 0.5
Collector-Emitter Voltage (V)
Collector-Emitter Dark Current
vs. Temperature
1000 Conditions: Ee = 0 mW/cm2
VCE = 10V
100
10
1
0
-25 0 25 50 75 100
Temperature—(°C)
OPTEK Technology Inc.— 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (800) 341-4747 FAX: (972) 323– 2396 [email protected] www.optekinc.com
Issue 1.1 07.05
Page 3 of 4










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