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SEP8506 PDF даташит

Спецификация SEP8506 изготовлена ​​​​«Honeywell» и имеет функцию, называемую «GaAs Infrared Emitting Diode».

Детали детали

Номер произв SEP8506
Описание GaAs Infrared Emitting Diode
Производители Honeywell
логотип Honeywell логотип 

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SEP8506 Даташит, Описание, Даташиты
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SEP8506
GaAs Infrared Emitting Diode
FEATURES
Side-emitting plastic package
50¡ (nominal) beam angle
935 nm wavelength
Mechanically and spectrally matched to
SDP8406 phototransistor, SDP8106
photodarlington and SDP8000/8600 series
Schmitt trigger
DESCRIPTION
The SEP8506 is a gallium arsenide infrared emitting
diode molded in a side-emitting red plastic package.
The chip is positioned to emit radiation through a plastic
lens from the side of the package.
INFRA-20.TIF
OUTLINE DIMENSIONS in inches (mm)
Tolerance 3 plc decimals ±0.005(0.12)
2 plc decimals ±0.020(0.51)
DIM_071.ds4
h Honeywell reserves the right to make
40 changes in order to improve design and
supply the best products possible.









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SEP8506 Даташит, Описание, Даташиты
SEP8506
GaAs Infrared Emitting Diode
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL MIN TYP MAX UNITS
TEST CONDITIONS
ABSOLUTE MAXIMUM RATINGS
(25¡C Free-Air Temperature unless otherwise noted)
Continuous Forward Current
50 mA
Power Dissipation
100 mW [À]
Storage Temperature Range
-40¡C to 85¡C
Operating Temperature Range
-40¡C to 85¡C
Soldering Temperature (5 sec)
240¡C
Notes
1. Derate linearly from 25¡C free-air temperature at the rate of
0.78 mW/¡C.
SCHEMATIC
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
h
41









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SEP8506 Даташит, Описание, Даташиты
SEP8506
GaAs Infrared Emitting Diode
Fig. 1 Radiant Intensity vs
Angular Displacement
gra_030.ds4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
-60 -45 -30 -15 0 +15 +30 +45 +60
Angular displacement - degrees
Fig. 3 Forward Voltage vs
Forward Current
1.40
1.35
1.30
1.25
1.20
1.15
1.10
1.05
0
20 40
Forward current - mA
gra_003.ds4
60
Fig. 5 Spectral Bandwidth
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
870 890 910 930 950 970
Wavelength - nm
gra_005.ds4
990 1010
Fig. 2 Radiant Intensity vs
Forward Current
10.0
5.0
TA = 25 °C
2.0
1.0
0.5
gra_028.ds4
0.2
0.1
10
20 30 40 50
Forward current - mA
100
Fig. 4 Forward Voltage vs
Temperature
1.40
1.35
gra_207.ds4
1.30
1.25
1.20
1.15
1.10
IF = 20 mA
1.05
1.00
-40
-15 10 35 60
Temperature - °C
85
Fig. 6
Coupling Characteristics
with SDP8406
10
6
4
2
gra_031.ds4
1.0
0.6
0.4
0.2
0.1
0.01
IF = 20 mA
VCE = 5V
TA = 25 °C
0.02 0.05 0.1 0.2 0.5
Lens-to-lens separation - inches
1.0
h Honeywell reserves the right to make
42 changes in order to improve design and
supply the best products possible.










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Номер в каталогеОписаниеПроизводители
SEP8506GaAs Infrared Emitting DiodeHoneywell
Honeywell

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