C1226 PDF даташит
Спецификация C1226 изготовлена «IMP» и имеет функцию, называемую «CMOS». |
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Детали детали
Номер произв | C1226 |
Описание | CMOS |
Производители | IMP |
логотип |
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®
ISO 9001 Registered
Process C1226
CMOS 1.2µm
100V CMOS, Double Metal - Double Poly
Electrical Characteristics
T = 25oC Unless otherwise noted
Symbol
N-Channel High Voltage Transistor
Threshold Voltage
HVTN
Punch Through Voltage
HVBVDSSN
ON Resistance
HVPR0N
Operating Voltage
N-Channel Low Voltage Transistor
Threshold Voltage
VTN
Body Factor
γN
Conduction Factor
βN
Effective Channel Length
LeffN
Width Encroachment
∆WN
Punch Through Voltage
BVDSSN
Poly Field Threshold Voltage VTFPN
Minimum
0.70
120
550
0.30
64
5
8
Typical
0.90
700
VGS = 5V
VDS = 100V
0.45
0.475
78
1.35
0.4
12
15
Maximum
1.10
850
0.65
92
Unit Comments
V
V
Ω W/L = 147/5
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
Symbol
P-Channel High Voltage Transistor
Threshold Voltage
HVTP
Punch Through Voltage
HVBVDSSP
ON Resistance
HVPR0N
Operating Voltage
P-Channel Low Voltage Transistor
Threshold Voltage
VTP
Body Factor
γP
Conduction Factor
βP
Effective Channel Length
LeffP
Width Encroachment
∆WP
Punch Through Voltage
BVDSSP
Poly Field Threshold Voltage VTFP(P)
Minimum
– 0.70
– 120
2000
-0.65
20
–5
–8
Typical
– 0.90
2500
VGS = 5V
VDS = 100V
– 0.45
0.6
25
1.5
0.4
–12
–12
Maximum
– 1.10
3000
– 0.30
30
Unit Comments
V
V
Ω W/L = 139/5
V
V
V1/2
µA/V2
µm
µm
V
V
100x1.5µm
100x1.5µm
100x100µm
100x1.5µm
Per side
© 2001 IMP, Inc.
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Process C1226
Physical Characteristics
Diffusion & Thin Films
Symbol
Starting Material p<100>
Well (field) Sheet Resistance ρN-well(f)
N+ Sheet Resistance
ρN+
N+ Junction Depth
P+ Sheet Resistance
xjN+
ρP+
P+ Junction Depth
xjP+
High-Voltage Gate Oxide Th HTGOX
Gate Oxide Thickness
TGOX
Interpoly Oxide
Gate Poly Sheet Resistance
Metal-1 Sheet Resistance
Metal-2 Sheet Resistance
IPOX
ρPOLY1
ρM1
ρM2
Passivation Thickness
TPASS
High Voltage Section Rules
Min Channel Width
Min Spacing, Active Region, 5V
Poly1 Width/Space
Poly2 Width/Space
Contact Width/Space
Via Width/Space
Metal-1 Width/Space
Metal-2 Width/Space
Minimum Typical Maximum Unit
1.0
20
60
33.6
1.7
35
0.3
110
0.3
24
24
42.0
30.0
45
29
200+900
Layout Rules
2.4
50
150
50.4
KΩ/
Ω/
µm
Ω/
µm
nm
nm
nm
Ω/
mΩ/
mΩ/
nm
4.0µm
2.0µm
1.5/2.0µm
3.0/2.0µm
1.5/1.5µm
1.5/1.5µm
2.5/1.5µm
2.5/1.5µm
Diffusion Overlap of Contact
Poly Overlap of Contact
Contact to Poly Space
Metal-1 Overlap of Contact
Minimum Pad Opening
Minimum Pad to Pad Spacing
Minimum Pad Pitch
Comments
n-well
oxide+nit.
1.0µm
1.0µm
1.5µm
1.0µm
65x65µm
5.0µm
80µm
70 C1226-11-01
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