GF4450 PDF даташит
Спецификация GF4450 изготовлена «General Semiconductor» и имеет функцию, называемую «N-Channel Enhancement-Mode MOSFET». |
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Детали детали
Номер произв | GF4450 |
Описание | N-Channel Enhancement-Mode MOSFET |
Производители | General Semiconductor |
логотип |
5 Pages
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GF4450
N-Channel Enhancement-Mode MOSFET
CH ®
TGREENNFET Product0.197(5.00)
New0.189 (4.80)
SO-8
VDS 60V RDS(ON) 24mΩ ID 7.5A
8
1
0.050 (1.27)
5
0.157 (3.99)
0.150 (3.81)
0.244 (6.20)
0.228 (5.79)
4
Dimensions in inches
and (millimeters)
0.020 (0.51)
0.013 (0.33)
0.019
0.010
(0.48)
(0.25)
x
45
°
0.009 (0.23)
0.007 (0.18)
0.009 (0.23)
0.004 (0.10)
0.069 (1.75)
0.053 (1.35)
0°– 8°
0.050(1.27)
0.016 (0.41)
0.245 (6.22)
Min.
0.05 (1.27)
0.04 (1.02)
0.165 (4.19)
0.155 (3.94)
0.035 (0.889)
0.025 (0.635)
0.050 typ.
(1.27)
Mounting Pad Layout
Mechanical Data
Case: SO-8 molded plastic body
Terminals: Leads solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Mounting Position: Any
Weight: 0.5g
Features
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low
On-Resistance
• Specially Designed for Low Voltage DC/DC
Converters
• Fast Switching for High Efficiency
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current(1)
VDS
60
VGS ±20
ID 7.5
Pulsed Drain Current
IDM 50
Maximum Power Dissipation(1)
TA = 25°C
TA = 70°C
PD
2.5
1.6
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance(1)
TJ, Tstg
RθJA
–55 to 150
50
Note: (1) Surface Mounted on FR4 Board, t ≤ 10s
Unit
V
A
W
°C
°C/W
7/10/01
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GF4450
N-Channel Enhancement-Mode MOSFET
Electrical Characteristics (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min Typ Max Unit
Static
Drain-Source Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
60
–
–
V
Gate Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
VDS = VGS, ID = 250µA
VDS = 0V, VGS = ±20V
2.0
–
––V
–
± 100
nA
Zero Gate Voltage Drain Current
On-State Drain Current(2)
IDSS
VDS = 60V, VGS = 0V
–
– 1.0 µA
ID(on)
VDS ≥ 5V, VGS = 10V
20
–
–
A
Drain-Source On-State Resistance(2)
Forward Transconductance(2)
RDS(on)
gfs
VGS = 10V, ID = 7.5A
VGS = 6.0V, ID = 6.5A
VDS = 15V, ID = 7.5A
–
–
–
12 24
mΩ
14 30
36 –
S
Dynamic
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Qg
Qgs VDS = 30V, VGS = 10V
Qgd ID = 7.5A
–
–
–
65 91
12 – nC
14 –
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
td(on)
– 17 30
VDD = 30V, RL = 30Ω
tr – 13 20
ID ≈ 1A, VGEN = 10V
ns
td(off)
– 78 117
RG = 6Ω
tf – 31 40
Input Capacitance
Ciss VGS = 0V
– 3147 –
Output Capacitance
Coss
VDS = 30V
– 283 –
pF
Reverse Transfer Capacitance
Crss f = 1.0MHZ
– 140 –
Source-Drain Diode
Diode Forward Voltage
VSD IS = 2.1A, VGS = 0V
– 0.71 1.2
V
Max. Diode Forward Current
IS
– – 2.1 A
Notes: (1) Surface Mounted on FR4 Board, t ≤ 10s
(2) Pulse test; pulse width ≤ 300µs, duty cycle ≤ 2%
Switching
Test Circuit
VIN
VGEN
RG
G
VDD
RD
D
VOUT
DUT
S
Switching
Waveforms
td(on)
ton
tr td(off)
90%
toff
tf
90 %
Output, VOUT
Input, VIN 10%
10%
50%
10%
INVERTED
90%
50%
PULSE WIDTH
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GF4450
N-Channel Enhancement-Mode MOSFET
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Output Characteristics
50
6.0V
5.0V
40
VGS =10V
4.5V
30
20 4.0V
10
3.5V
0
0 2 4 6 8 10
VDS -- Drain-to-Source Voltage (V)
Fig. 3 – Threshold Voltage
vs. Temperature
3.2
3
2.8
2.6 ID = 250µA
2.4
2.2
2
1.8
1.6
1.4
--50 --25
0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 5 – On-Resistance
vs. Junction Temperature
1.8
VGS = 10V
1.6 ID = 7.5A
1.4
1.2
1
0.8
0.6
0.4
--50 --25 0
25 50 75 100 125 150
TJ -- Junction Temperature (°C)
Fig. 2 – Transfer Characteristics
50
VDS = 10V
40
30
20
10
0
1
0.04
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
0
TJ = 125°C
25°C
--55°C
2 3 45
VGS -- Gate-to-Source Voltage (V)
Fig. 4 – On-Resistance
vs. Drain Current
VGS = 4.5V
6V
10V
10 20 30
ID -- Drain Current (A)
40
6
50
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Номер в каталоге | Описание | Производители |
GF4450 | N-Channel Enhancement-Mode MOSFET | General Semiconductor |
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