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HAT2058R PDF даташит

Спецификация HAT2058R изготовлена ​​​​«Renesas Technology» и имеет функцию, называемую «Silicon N Channel Power MOS FET High Speed Power Switching».

Детали детали

Номер произв HAT2058R
Описание Silicon N Channel Power MOS FET High Speed Power Switching
Производители Renesas Technology
логотип Renesas Technology логотип 

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HAT2058R Даташит, Описание, Даташиты
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HAT2058R/HAT2058RJ
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
Low on-resistance
Capable of 4 V gate drive
Low drive current
High density mounting
“J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
SOP-8
78
DD
8 7 65
1 234
56
DD
24
GG
S1
MOS1
S3
MOS2
1, 3 Source
2, 4 Gate
5, 6, 7, 8 Drain
ADE-208-934 (Z)
1st. Edition
Mar. 2001









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HAT2058R Даташит, Описание, Даташиты
HAT2058R/HAT2058RJ
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item
Symbol
HAT2058R
HAT2058RJ Unit
Drain to source voltage
VDSS
100
100
V
Gate to source voltage
VGSS
±20
±20
V
Drain current
ID 4 4 A
Drain peak current
ID (pulse) Note1 32 32 A
Body-drain diode reverse drain
I DR
4
4
A
current
Avalanche current
Avalanche energy
Channel dissipation
I Note4
AP
E Note4
AR
Pch Note2
2
4A
1.6 mJ
2W
Pch Note3
3
3
W
Channel temperature
Tch 150 150 °C
Storage temperature
Tstg
–55 to +150
–55 to +150
°C
Notes: 1. PW 10 µs, duty cycle 1%
2. 1 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
3. 2 Drive operation; When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW 10 s
4. Value at Tch = 25°C, Rg 50
2









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HAT2058R Даташит, Описание, Даташиты
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Drain to source breakdown
voltage
V(BR)DSS 100
Gate to source breakdown
voltage
V(BR)GSS ±20
Zero gate voltage HAT2058R IDSS
drain current
HAT2058RJ IDSS
Zero gate voltage HAT2058R IDSS
drain current
HAT2058RJ IDSS
Gate to source cutoff voltage
I GSS
Static drain to source on state
resistance
VGS(off)
1.0
Forward transfer admittance
Static drain to source on state
resistance
Input capacitance
|yfs|
RDS(on)
RDS(on)
Ciss
3
Output capacitance
Coss —
Reverse transfer capacitance Crss —
Turn-on delay time
td(on) —
Rise time
tr —
Turn-off delay time
td(off) —
Fall time
tf —
Body-drain diode forward voltage VDF
Body-drain diode reverse
recovery time
trr
Note: 1. Pulse test
Typ
5
120
150
420
180
100
10
30
110
60
0.85
75
HAT2058R/HAT2058RJ
Max Unit
—V
—V
1 µA
0.1 µA
µA
10 µA
±10 µA
2.5 V
—S
145 m
180 m
— pF
— pF
— pF
— ns
— ns
— ns
— ns
1.1 V
— ns
Test conditions
ID = 10 mA, VGS = 0
IG = ±100 µA, VDS = 0
VDS = 100 V, VGS = 0
VDS = 80 V, VGS = 0
Ta = 125°C
VGS = ±16 V, VDS = 0
VDS = 10 V, ID = 1 mA
ID = 2 A*1, VDS = 10 V
ID = 2 A*1, VGS = 10 V
ID = 2 A*1, VGS = 4 V
VDS = 10 V, VGS = 0
f = 1 MHz
VGS = 10 V, ID = 2 A
VDD 30 V
IF = 4 A, VGS = 0*1
IF = 4 A, VGS = 0
diF/dt = 50 A/µs
3










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Номер в каталогеОписаниеПроизводители
HAT2058RSilicon N Channel Power MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology
HAT2058RJSilicon N Channel Power MOS FET High Speed Power SwitchingRenesas Technology
Renesas Technology

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