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PDF HFA30PB120 Data sheet ( Hoja de datos )
| Número de pieza | HFA30PB120 | |
| Descripción | SOFT RECOVERY DIODE | |
| Fabricantes | International Rectifier | |
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HEXFREDTM
Features
Ultrafast Recovery
Ultrasoft Recovery
Very Low IRRM
Very Low Qrr
Guaranteed Avalanche
Specified at Operating Conditions
Benefits
Reduced RFI and EMI
Reduced Power Loss in Diode and
Switching Transistor
Higher Frequency Operation
Reduced Snubbing
Reduced Parts Count
PD -2604A
HFA30PB120
Ultrafast, Soft Recovery Diode
VR = 1200V
VF(typ.)* = 2.3V
IF(AV) = 30A
Qrr (typ.)= 120nC
IRRM(typ.) = 4.7A
trr(typ.) = 47ns
di(rec)M/dt (typ.)* = 240A/µs
TO-247AC (Modified)
Description
International Rectifier's HFA16PB120 is a state of the art center tap ultra fast recovery diode. Employing
the latest in epitaxial construction and advanced processing techniques it features a superb combination
of characteristics which result in performance which is unsurpassed by any rectifier previously available.
With basic ratings of 1200 volts and 16 amps continuous current, the HFA16PB120 is especially well
suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultra fast recovery time,
the HEXFRED product line features extremely low values of peak recovery current (IRRM) and does not
exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to
offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and
the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing,
component count and heatsink sizes. The HEXFRED HFA16PB120 is ideally suited for applications in
power supplies and power conversion systems (such as inverters), motor drives, and many other similar
applications where high speed, high efficiency is needed.
Absolute Maximum Ratings
Parameter
VR Cathode-to-Anode Voltage
IF @ TC = 100°C Continuous Forward Current
IFSM Single Pulse Forward Current
IFRM Maximum Repetitive Forward Current
PD @TC = 25°C Maximum Power Dissipation
PD @TC = 100°C Maximum Power Dissipation
TJ Operating Junction and
TSTG
Storage Temperature Range
* 125°C
www.irf.com
Max.
1200
30
120
90
350
140
-55 to + 150
Units
V
A
W
°C
1
07/27/04
1 page  
HFA30PB120
REVERSE RECOVERY CIRCUIT
VR = 200V
L = 70µH
0.01 Ω
D.U.T.
dif/dt
ADJUST G
D
IRFP250
S
IF
0
3
trr
ta
tb
2 I RRM
Qrr 4
0.5 I RRM
di(rec)M/dt
5
0.75 IRRM
1 dif /dt
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
Fig. 9 - Reverse Recovery Parameter Test
Circuit
Fig. 10 - Reverse Recovery Waveform and
Definitions
DUT
CURRENT
MONITOR
L = 100µH
Rg = 25 ohm
HIGH-SPEED
SWITCH
FREE-WHEEL
DIODE
+
Vd = 50V
I L(PK)
V (AVAL)
V R(RATED)
DECAY
TIME
Fig. 11 - Avalanche Test Circuit and Waveforms
www.irf.com
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet HFA30PB120.PDF ] | |
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