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Número de pieza | HM62W1400H | |
Descripción | 4M High Speed SRAM | |
Fabricantes | Hitachi Semiconductor | |
Logotipo | ||
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HM62W1400H Series
4M High Speed SRAM (4-Mword × 1-bit)
ADE-203-773E (Z)
Rev. 2.0
Nov. 11, 1998
Description
The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword × 1-bit. It has realized high
speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed
circuit designing technology. It is most appropriate for the application which requires high speed and high
density memory, such as cache and buffer memory in system. The HM62W1400H is packaged in 400-mil
32-pin SOJ and 400-mil 32-pin TSOP II for high density surface mounting.
Features
• Single 3.3 V supply : 3.3 V ± 0.3 V
• Access time 12/15 ns (max)
• Completely static memory
No clock or timing strobe required
• Equal access and cycle times
• Directly TTL compatible
All inputs and outputs
• Operating current: 180/160 mA (max)
• TTL standby current: 60/50 mA (max)
• CMOS standby current: 5 mA (max)
: 1 mA (max) (L-version)
• Data retension current: 0.6 mA (max) (L-version)
• Data retension voltage: 2 V (min) (L-version)
• Center VCC and VSS type pinout
1 page HM62W1400H Series
DC Characteristics (Ta = 0 to +70°C, VCC = 3.3 V ± 0.3 V, VSS = 0V)
Parameter
Symbol Min
Input leakage current
IILII
Output leakage current
IILOI
Operation power
supply current
12 ns cycle ICC
—
—
—
Standby power supply
current
15 ns cycle ICC
12 ns cycle ISB
15 ns cycle ISB
I SB1
—
—
—
—
Typ*1
—
—
—
Max
2
2
180
Unit
µA
µA
mA
— 160
— 60
— 50
0.05 5
mA
mA
—*2 0.05*2 1*2
Output voltage
VOL — — 0.4 V
VOH 2.4 — — V
Notes: 1. Typical values are at VCC = 3.3 V, Ta = +25°C and not guaranteed.
2. This characteristics is guaranteed only for L-version.
Test conditions
Vin = VSS to VCC
Vin = VSS to VCC
Min cycle
CS = VIL, lout = 0 mA
Other inputs = VIH/VIL
Min cycle, CS = VIH,
Other inputs = VIH/VIL
f = 0 MHz
VCC ≥ CS ≥ VCC - 0.2 V,
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC - 0.2 V
IOL = 8 mA
IOH = –4 mA
Capacitance (Ta = +25°C, f = 1.0 MHz)
Parameter
Symbol Min
Typ
Input capacitance*1
Cin —
—
CDIN
—
—
Input/output capacitance*1
CDOUT
—
—
Note: 1. This parameter is sampled and not 100% tested.
Max
6
8
8
Unit
pF
pF
pF
Test conditions
Vin = 0 V
VDIN = 0 V
VDOUT = 0 V
5
5 Page HM62W1400H Series
Low VCC Data Retention Characteristics (Ta = 0 to +70°C)
This characteristics is guaranteed only for L-version.
Parameter
Symbol Min Typ*1 Max Unit Test conditions
VCC for data retention
VDR
Data retention current
I CCDR
Chip deselect to data
retention time
t CDR
2.0 —
— 40
0—
— V VCC ≥ CS ≥ VCC – 0.2 V
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC – 0.2 V
600 µA VCC = 3 V, VCC ≥ CS ≥ VCC – 0.2 V
(1) 0 V ≤ Vin ≤ 0.2 V or
(2) VCC ≥ Vin ≥ VCC – 0.2 V
— ns See retention waveform
Operation recovery time tR
5 — — ms
Note: 1. Typical values are at VCC = 3.0 V, Ta = +25˚C, and not guaranteed.
Low VCC Data Retention Timing Waveform
VCC
3.0 V
VDR
2.2 V
tCDR
Data retention mode
CS VCC ≥ CS ≥ VCC – 0.2 V
0V
tR
11
11 Page |
Páginas | Total 14 Páginas | |
PDF Descargar | [ Datasheet HM62W1400H.PDF ] |
Número de pieza | Descripción | Fabricantes |
HM62W1400H | 4M High Speed SRAM | Hitachi Semiconductor |
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