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NE687M03 PDF даташит

Спецификация NE687M03 изготовлена ​​​​«CEL» и имеет функцию, называемую «NPN SILICON TRANSISTOR».

Детали детали

Номер произв NE687M03
Описание NPN SILICON TRANSISTOR
Производители CEL
логотип CEL логотип 

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NE687M03 Даташит, Описание, Даташиты
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NEC's
NPN SILICON TRANSISTOR
NE687M03
FEATURES
• NEW M03 PACKAGE:
• Smallest transistor outline package available
• Low profile/0.59 mm package height
• Flat lead style for better RF performance
• HIGH GAIN BANDWIDTH PRODUCT:
fT = 14 GHz
• LOW NOISE FIGURE:
NF = 1.4 dB at 2 GHz
DESCRIPTION
NEC's NE687M03 transistor is designed for low noise, high
gain, and low cost requirements. This high fT part is well suited
for very low voltage/low current designs for portable wireless
communications and cellular radio applications. NEC's new
low profile/flat lead style "M03" package is ideal for today's
portable wireless applications. The NE687 is also available in
six different low cost plastic surface mount package styles.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M03
1.2±0.05
0.8±0.1
2
1.4 ±0.1 0.45
(0.9)
0.45
1
0.2
+0.1
-0
0.3
+0.1
-0
3
0.59±0.05
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
0.15-+00.0.15
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
EIAJ1 REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
fT
NF
|S21E|2
hFE2
ICBO
IEBO
CRE3
Gain Bandwidth at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Noise Figure at VCE = 2 V, IC = 3 mA, f = 2 GHz
VCE = 1 V, IC = 3 mA, f = 2 GHz
Insertion Power Gain at VCE = 2 V, IC = 20 mA, f = 2 GHz
VCE = 1 V, IC = 10 mA, f = 2 GHz
Forward Current Gain at VCE = 2 V, IC = 20 mA
Collector Cutoff Current at VCB = 5 V, IE = 0
Emitter Cutoff Current at VEB = 1 V, IC = 0
Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz
GHz
GHz
dB
dB
dB
dB
μA
μA
pF
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed measurement, pulse width 350 μs, duty cycle 2 %.
3. Capacitance is measured with emitter and case connected to the guard terminal at the bridge.
NE687M03
2SC5436
M03
MIN TYP MAX
9 14
7 12
1.3 2
1.3 2
8.5 10
6 9.0
70 130
0.1
0.1
0.4 0.8
California Eastern Laboratories









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NE687M03 Даташит, Описание, Даташиты
NE687M03
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VCBO Collector to Base Voltage
V
5
VCEO Collector to Emitter Voltage V
3
VEBO Emitter to Base Voltage
V
2
IC Collector Current
mA 30
PT Total Power Dissipation
mW
90
TJ Junction Temperature
°C 150
TSTG Storage Temperature
°C -65 to +150
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ORDERING INFORMATION
PART NUMBER
QUANTITY
NE687M03-A
NE687M03-T1-A
TYPICAL PERFORMANCE CURVES (TA = 25°C)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
25
20
200 µA
180 µA
15 160 µA
140 µA
120 µA
10 100 µA
80 µA
5 60 µA
40 µA
IB = 20 µA
0
0 2.2 2.4 2.6
Collector to Emmiter Voltage, VCE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 2V
40
30
20
10
0 0.5 1.0
Base to Emmiter Voltage, VBE (V)
D.C. CURRENT GAIN
vs. COLECTOR CURRENT
500
200
100 VCE = 2 V
50 VCE = 1 V
20
10
1
2
5 10 20
50 100
Collector Current, IC (mA)









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NE687M03 Даташит, Описание, Даташиты
NE687M03 NONLINEAR MODEL
NE687M03
SCHEMATIC
Base
LBX
LB
CCBPKG
CCB
CCE
Q1
LCX
Collector
LE CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS(1)
Parameters
Q1 Parameters Q1
IS
BF
NF
VAF
IKF
ISE
NE
BR
NR
VAR
IKR
ISC
NC
RE
RB
RBM
IRB
RC
CJE
VJE
MJE
CJC
VJC
302.3e-18
104
1.038
10
0.370
1e-6
31.19
17.54
1.023
30
8.369e-3
81.93e-12
4.986
0.80
11.10
2.46
17e-3
4.477
0.415e-12
0.68
0.53
0.102e-12
0.8
MJC
XCJC
CJS
VJS
MJS
FC
TF
XTF
VTF
ITF
PTF
TR
EG
XTB
XTI
KF
AF
0.53
0.27
0
0.75
0
0.37
5e-12
8
0.06
1.0
69.1
1.e-9
1.11
0
3
0
1
UNITS
Parameter
time
capacitance
inductance
resistance
voltage
current
Units
farads
henries
ohms
seconds
volts
amps
ADDITIONAL PARAMETERS
Parameters
CCB
CCE
LB
LE
CCBPKG
CCEPKG
LBX
LCX
LEX
687M03
0.26e-12
0.19e-12
0.4e-9
0.7e-9
0.08e-12
0.08e-12
0.12e-9
0.10e-9
0.12e-9
MODEL TEST CONDITIONS
Frequency: 0.1 to 5.0 GHz
Bias:
VCE = 0.5 V to 2.5 V, IC = 0.5 mA to 30 mA
Date:
11/98
hFE = 108 at 2 V, 20 mA
(1) Gummel-Poon Model
Life Support Applications
These NEC products are not intended for use in life support devices, appliances, or systems where the malfunction of these products can reasonably
be expected to result in personal injury. The customers of CEL using or selling these products for use in such applications do so at their own risk and
agree to fully indemnify CEL for all damages resulting from such improper use or sale.
04/26/2004
A Business Partner of NEC Compound Semiconductor Devices, Ltd.










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